SANYO 2SC5490 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band
Low-Noise Amplifier Applications
Ordering number:ENN6289
2SC5490
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
· High gain : S21e2=10dB typ (f=1.5GHz).
· High cutoff frequency : fT=11GHz typ.
· Ultrasmall, slim flat-lead package.
(1.4mm×0.8mm×0.6mm)
· Low voltage, low current operation.
(VCE=1V, IC=1mA)
: fT=7GHz typ.
: S21e2=5.5dB typ (f=1.5GHz)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2159
[2SC5490]
1.4
0.25
132
0.45
0.2
OBC
OEC
OBE
0.3
0.8
1.4
0.3
0.6
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
02V
01V
5.1V
03Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
Marking : MN Continued on next page.
h
V
OBC
OBE
EF
fT1VECI,V5=
fT2VECI,V1=
BC
V
BE
V
EC
BC
BC
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am01=
C
Am01=
C
Am1=
C
zHM1=f,V01=
zHM1=f,V01=
nimpytxam
D1099TS (KOTO) TA-1677 No.6289–1/4
sgnitaR
09002
811zHG
7zHG
54.07.0Fp
3.0Fp
tinU
Continued from preceding page.
retemaraPlobmySsnoitidnoC
niaGrefsnarTdrawroF
erugiFesioN
2
V
|e12S|
1
EC
2
V
|e12S|
2
EC
1FNVECI,V5=
2FNVECI,V2=
2SC5490
I,V5=
C
I,V1=
C
C
C
sgnitaR
nimpytxam
zHG5.1=f,Am01=
zHG5.1=f,Am1=
801Bd
5.5Bd
zHG5.1=f,Am5=4.10.3Bd
zHG1=f,Am3=9.0Bd
tinU
DC Current Gain, h
FE
100
1.0
5
3
2
7
5
3
2
10
7
5
5
3
2
7
5
3
2
3257 3257 3257
hFE -- I
1.00.1
Collector Current, IC–mA
Cob -- V
C
VCE=5V
10 100
CB
IT01377
f=1MHz
– GHz
10
T
1.0
Gain-Bandwidth Product, f
1.0
3
2
7
5
3
2
7
5
5
3
2
7
5
3
2
f
-- I
T
C
=5V
V
CE
1V
1.00.1
Collector Current, IC–mA
Cre -- V
10
CB
f=1GHz
523 57 23 2357
IT01378
f=1MHz
Output Capacitance, Cob – pF
2
–dB
Forward Transfer Gain, S21e
0.1
7
5
16
14
12
10
8
6
4
2
0
325
7325 32577
Collector-to-Base Voltage, VCB-- V
1.0
S21e
33255732577
1.0
Collector Current, IC–mA
100.1
2
-- I
C
V
CE
=5V
2V
1V
10 100
0.1
Reverse Transfer Capacitance, Cre – pF
7
5
IT01379
–dB
2
Forward Transfer Gain, S21e
16
14
12
10
8
6
4
2
0
33255732577
f=1.5GHz f=1GHz
IT01381
325
73257 5327
Collector-to-Base Voltage, VCB-- V
1.0
S21e
2
-- I
100.1
C
V
CE
=5V
2V
1V
1.0
Collector Current, IC–mA
10 100
IT01380
IT01382
No.6289–2/4
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