SANYO 2SC5489 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Ordering number:ENN6339
2SC5489
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low noise : NF=1.2dB typ (f=1GHz).
· High gain : S21e2=13dB typ (f=1GHz).
· High cutoff frequency : fT=9.0GHz typ.
· Ultrasmall, slim flat-lead package.
(1.4mm × 0.8mm × 0.6mm)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2159
[2SC5489]
1.4
0.25
132
0.45
0.2
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
0.3
0.8
1.4
0.3
0.6
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
61V
8V
5.1V
05Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
niaGrefsnarTdrawroF|e12S|
erugiFesioN
h
V
OBC
V
OBE
V
EF
f
V
T
2
V
FNVECI,V5=
I,V01=
BC
BE
EC
EC
BC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am51=
C
I,V5=
Am51=
C
zHM1=f,V01=
I,V5=
C
C
zHG1=f,Am51=
zHG1=f,Am5=2.15.2Bd
Marking : GN
13100TS (KOTO) TA-2600 No.6339–1/3
sgnitaR
nimpytxam
09002
0.9zHG
6.01.1Fp
0131Bd
tinU
2SC5489
FE
100
3
2
7
5
3
2
hFE -- I
C
VCE=5V
– GHz
T
2
10
7
5
3
2
DC Current Gain, h
10
7
5
5
3
2
1.0
Collector Current, IC–mA
Cob -- V
10 100
CB
32573257357
IT01370
f=1MHz
1.0
Gain-Bandwidth Product, f
7
5
7235723 57
1.0
5
3
2
f
-- I
T
C
Collector Current, IC–mA
Cre -- V
10
CB
VCE=5V
IT01371
f=1MHz
1.0
7
5
3
2
Output Capacitance, Cob – pFForward Transfer Gain, S21e
0.1
Collector-to-Base Voltage, VCB- - V Collector-to-Base Voltage, VCB-- V
16
VCE=5V
f=1GHz
14
–dBCollector Dissipation, P
2
12
10
8
6
4
2
0
53257 32577
1.0
120
325
73257 327
1.0
2
S21e
Collector Current, IC–mA
-- I
C
10
P
-- Ta
C
1.0
7
5
3
2
Reverse Transfer Capacitance, Cre – pF
100.1
IT01372
0.1
10
325
73257 327
1.0
NF -- I
100.1
IT01373
C
VCE=5V
f=1GHz
8
6
4
Noise Figure, NF – dB
2
IT01374
0
1.0
3232
57 57
Collector Current, IC–mA
10
IT01375
– mW
C
100
80
60
40
20
0
2006040 80 100 140120 160
Ambient Temperature, Ta – °C
IT01376
No.6339–2/3
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