SANYO 2SC5488 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Ordering number:ENN6288
2SC5488
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=12dB typ (f=1GHz).
· High cutoff frequency : fT=7GHz typ.
· Ultrasmall, slim flat-lead package.
(1.4mm×0.8mm×0.6mm)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2159
[2SC5488]
1.4
0.25
132
0.45
0.2
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
0.3
0.8
1.4
0.3
0.6
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
02V
01V
2V
07Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioN
h
V
OBC
V
OBE
V
EF
f
V
T
2
V
|e12S|
1
2
V
2
|e12S|
FNVECI,V5=
I,V01=
BC
BE
EC
EC
BC
BC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am02=
C
I,V5=
Am02=
C
zHM1=f,V01=
zHM1=f,V01=
I,V5=
C
I,V2=
C
C
zHG1=f,Am02=
zHG1=f,Am3=
zHG1=f,Am7=0.18.1Bd
Marking : LN
D1099TS (KOTO) TA-1675 No.6288–1/4
sgnitaR
nimpytxam
09002
57 zHG
7.02.1Fp
54.0Fp
921Bd
5.8Bd
tinU
2SC5488
FE
100
3
2
7
5
3
2
hFE -- I
C
VCE=5V
– GHz
T
2
10
7
5
3
2
DC Current Gain, h
10
7
5
1.0
3
2
32
57 32257357
10 100
Collector Current, IC–mA
Cob -- V
CB
IT01363
f=1MHz
1.0
Gain-Bandwidth Product, f
7
5
7223 5723 57
1.0
3
2
f
-- I
T
C
Collector Current, IC–mA
10 100
Cre -- V
CB
VCE=5V
IT01364
f=1MHz
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
325
Collector-to-Base Voltage, VCB-- V
14
12
–dB
2
10
8
6
4
2
S21e
=5V
CE
V
Forward Transfer Gain, S21e
0
33257
120
1.0
Collector Current, IC– mA Collector Current, IC–mA
1.0
7
5
3
2
0.1
7
Reverse Transfer Capacitance, Cre – pF
73257 327
1.0
2
-- I
C
100.1
IT01365
f=1GHz
5
12
325
73257 327
Collector-to-Base Voltage, VCB-- V
1.0
NF -- I
C
100.1
IT01366
VCE=5V
f=1GHz
10
2V
8
6
4
Noise Figure, NF – dB
2
10
P
-- Ta
C
325757 2
100
IT01367
0
1.0
32
57 32257357
10 100
IT01368
100
– mW
80
C
60
40
20
Collector Dissipation, P
0
2006040 80 100 140120 160
Ambient Temperature, Ta – °C
IT01369
No.6288–2/4
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