Sanyo 2SC5476 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Darlington Transistor
85V/3A Driver Applications
Ordering number:EN6069
2SC5476
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.5
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Features
· High DC current gain.
· Large current capacity and wide ASO.
· Contains a Zener diode of 95±10V between collector
and base.
· Uniformity in collector-to-base voltage due to
adoption of accurate impurity diffusion process.
· High inductive load handling capability.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
* : With a Zener diode of (95±10V).
OBC
OEC
OBE
C
PC
B
C
Tc=25˚C
Package Dimensions
unit:mm
2041A
[2SC5476]
10.0
3.2
18.1
1.6
5.6
1.2
0.75
1
23
2.55
2.55
2.55
2.8
3.5
7.2
16.0
2.4
0.7
14.0
2.4
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
*58V
*58V
6V
3A
5A
5.0A
2W
02W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
h
V
OBC
V
OBE
V
EF
f
V
T
I
)tas(EC
C
I
)tas(EB
C
I,V07=
BC
BE
EC
EC
0=01Aµ
E
I,V5=
0=3Am
C
I,V3=
A5.1=
C
I,V5=
A5.1=
C
I,A5.1=
Am3=
B
I,A5.1=
Am3=0.2V
B
40199TS (KOTO) TA-1387 No.6069–1/4
sgnitaR
nimpytxam
00020006
05zHM
9.05.1V
Continued on next page.
tinU
Continued from preceding page.
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egatloVdaoLevitcudnIb/sER,Hm001=L
Es/b Test Circuit
SW
I
B
R
BE
2SC5476
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
6kΩ 200Ω
OBC)RB(
OEC)RB(
TUT
I
C
I
C
L
I,Am1.0=
0=5859501V
E
R,Am1=
=∞ 5859501V
EB
001= Ω 51Jm
EB
+V
CC
VCC=20V
RBE=100Ω
Tc=25°C
sgnitaR
nimpytxam
tinU
3.0
2.5
4mA
6mA
8mA
IC-
2mA
800µA
V
CE
1mA
–A
2.0
C
1.5
1.0
Collector Current, I
0.5
0
0 2.0 4.01.0 3.0 5.01.5 3.50.5 2.5 4.5
Collector-to-Emitter Voltage, VCE–V
h
-
I
C
10000
FE
DC Current Gain, h
1000
2
7
5
3
2
7
5
3
2
Ta=120
–40
FE
°C
°C
25
°C
600
µA
200µA
100µA
VCE=5V
400µA
=
I
B
4.0
3.5
3.0
–A
C
2.5
2.0
1.5
1.0
Collector Current, I
0.5
0
0
0 0.4 0.8 1.2 2.01.6 2.40.2 0.6 1.0 1.81.4 2.2
IC-
V
BE
Ta=120°C
VCE=5V
°C
25
–40°C
Base-to-Emitter Voltage, VBE–V
5
3
–V
2
V
CE(sat)
-
I
C
I
/
IB=500
C
CE(sat)
1.0
7
5
Collector-to-Emitter
Saturation Voltage, V
25
120
°C
°C
Ta=–40
°C
100
57 2 3 57 2 3 57
0.1 1.0
Collector Current, IC–A
3
7235723 557
0.1 1.0
Collector Current, IC–A
No.6069–2/4
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