Sanyo 2SC5452 Specifications

Ordering number:EN5957A

NPN Triple Diffused Planar Silicon Transistor

2SC5452

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

Package Dimensions

· High speed.

· High breakdown voltage (V =1600V).

CBO

·High reliability (Adoption of HVP process).

·Adoption of MBIT process.

Specifications

unit:mm

2039D

[2SC5452]

16.0	5.6
3.4	3.1

		5.0	8.0
21.0			22.0		2.0
4.0		2.8
		2.0		2.0
		1.0	20.4
				0.6
1	2	3		1	: Base
				2	: Collector
		3.5
				3	: Emitter
5.45		5.45		SANYO : TO-3PML

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		1600	V
Collector-to-Emitter Voltage	VCEO		800	V
Emitter-to-Base Voltage	VEBO		6	V
Collector Current	IC		20	A
Collector Current (Pulse)	ICP		40	A
Collector Dissipation	PC		3	W
		Tc=25˚C	75	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Collector Cutoff Current	ICES	VCE=1600V, RBE=0				1.0	mA
Collector-to-Emitter Sustain Voltage	VCEO(sus)	IC=100mA, IB=0		800			V
Emitter Cutoff Current	IEBO	VEB=4V, IC=0				1.0	mA
Collector Cutoff Current	ICBO	VCB=800V, IE=0				10	µA
DC Current Gain	hFE1	VCE=5V, IC=1A		15		30
	hFE2	VCE=5V, IC=14A		4		7

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

61099TS (KOTO) TA-1384 No.5957–1/4

2SC5452

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=14A, IB=3.5A			5	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=14A, IB=3.5A			1.5	V
Storage Time	tstg	IC=12A, IB1=2.0A, IB2=–5.0A			3.0	µs
Fall Time	tf	IC=12A, IB1=2.0A, IB2=–5.0A			0.2	µs

Switching Time Test Circuit

PW=20µs D.C.≤ 1%

		20
		18
	A	16
		14
	–
	C
	I	12
	Current,
		10
	Collector	8
		6
		4
		2
		0
		0
		100
		7
		5
	FE	3
	h	2
	Gain,
		10
	Current
		7
	DC	5
		3
		2
		1.0
		0.1

	IB1
I NPUT	IB 2
	RB
50Ω	VR

+

100µF

VBE=-2V

IC - VCE

	4.5A	4.0A	3.5A
5.0A

1

2

3

4

5

6

7

OUTPUT

RL=16.7Ω

+

470µF

VCC=200V

					20		IC
3.0A					VCE = 5V
					18
				A	16
	2.5A
				–	14
		2.0A
				C
		1.5A		I	12
				Current,
	1.0A				10
		0.5A		Collector	8
					6
					4
					2
	I	B	= 0		0
8	9		10			0.2	0.4
					0

- VBE

	°	C		C	C
Ta=120			°		°
			25		40
				–
0.6				0.8	1.0	1.2

Collector-to-Emitter Voltage, VCE – V

Base-to-Emitter Voltage, VBE – V

				hFE	-	IC							10			/I					VCE(sat)			-	IC
									V	= 5V				I	C		B	=5
									CE				7
												V	5
		°C										–	3
	Ta=120											CE(sat)	2
		°C											1.0
		25
											Emitter-to-Collector	Voltage,SaturationV	7		120°C
		°C											5
		–40											3
													2
													0.1					Ta=–40°C
													7
													5								°C
													3							25
													2
2	3	5	7		2	3	5	7		2	3		0.01				2		3	5	7		2	3	5	7		2	3
				1.0					10				0.1									1.0					10
		Collector Current, IC					–	A												Collector Current, IC					–	A

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