Sanyo 2SC5451 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Ordering number:EN5956

2SC5451

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

16.0

Features

· High speed.

· High breakdown voltage (V

CBO

=1600V).

· High reliability (Adoption of HVP process).

· Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

C

Package Dimensions

unit:mm

2039D

[2SC5451]

3.4

21.0

4.0

12

5.45

OBC
OEC
OBE

PC

Tc=25˚C

2.8

2.0

1.0

3

3.5

5.45

5.6

3.1

5.0

8.0

22.0

2.0

2.0

20.4

0.6

1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML

0061V
008V
6V
51A
53A
3W
57W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloC

egatloVniatsuSrettimE-ot-rotcelloCV

tnerruCffotuCrettimEI

tnerruCffotuCrotcelloC

niaGtnerruCCD

I

I
hEF1VECI,V5=
hEF2VECI,V5=

V

SEC

OBE
OBC

EC

I

)sus(OEC

C

V

BE

V

BC

R,V0061=

0=0.1Am

EB

I,Am001=

0=008V

B

I,V4=

0=0.1Am

C

I,V008=

0=01Aµ

E

A0.1=

C

A11=

C

sgnitaR

nimpytxam

5103
47

tinU

Continued on next page.

61099TS (KOTO) TA-1385 No.5956–1/4

2SC5451

Continued from preceding page.

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egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

emiTegarotSt

emiTllaFt

Switching Time Test Circuit

I

I,A11=

)tas(EC

C

I

)tas(EB

C

I

gts

C

I

f

C

A57.2=

B

I,A11=

A57.2=5.1V

B

I,A9=
I,A9=

I,A5.1=

1B
1B

2B

I,A5.1=

2B

sgnitaR

nimpytxam

A57.3–=
A57.3–=

tinU

5V

0.3sµ

2.0sµ

14

12

10

–A

PW=20µs
D.C.≤1%

INPUT

50Ω

I

B1

I

B2

R

B

V

R

V

=

BE

–2V

100

IC-

+

µ

F

470

V

CE

1.4A

OUTPUT

R

L

+

µ

F

V

=

200V

CC

1.0A

1.2A

C

8

0.8A

0.6A

6

4

0.4A

0.2A

Collector Current, I

2

0

024681013579

I

Collector-to-Emitter Voltage, VCE–V

=

22.2Ω

B

16

VCE=5V

14

12

–A

C

10

8

6

4

Collector Current, I

2

=

0

0

0 0.2 0.4 0.6 0.8 1.0 1.2

IC-

V

Ta=120

BE

°C

25°C

40°C

-

Base-to-Emitter Voltage, VBE–V

100

7
5

Ta=120

3

FE

2

10

7
5

DC Current Gain, h

3
2

1.0

0.1

25°C

-

40

357

2357

hFE-

°C

°C

1.0

I

C

22

VCE=5V

10

10

I

/

IB=5

C

7
5

3

–V

2

1.0

CE(sat)

7
5

3
2

-

40°C

Ta=

0.1
7
5

120°C

Collector-to-Emitter

Saturation Voltage, V

3
2

0.01
2357

0.1

V

CE(sat

°C

25

357

-

I

)

C

22

1.0

10

Collector Current, IC– A Collector Current, IC–A

No.5956–2/4