Sanyo 2SC5450 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Ordering number:EN5955

2SC5450

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

16.0

Features

· High speed.

· High breakdown voltage (V

CBO

=1600V).

· High reliability (Adoption of HVP process).

· Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

C

Package Dimensions

unit:mm

2039D

[2SC5450]

3.4

21.0

4.0

12

5.45

OBC
OEC
OBE

PC

Tc=25˚C

2.8

2.0

1.0

3

3.5

5.45

5.6

3.1

5.0

8.0

22.0

2.0

2.0

20.4

0.6

1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML

0061V
008V
6V
01A
52A

0.3W
07W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloC
tnerruCffotuCrotcelloC

egatloVniatsuSrettimE-ot-rotcelloCV

tnerruCffotuCrettimEI

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

I
I

V

OBC

V

SEC

I

)sus(OEC

C

V

OBE

I

)tas(EC

C

I

)tas(EB

C

I,V008=

BC
EC

BE

0=01Aµ

E

R,V0061=

0=0.1Am

EB

I,Am001=

0=008V

B

I,V4=

0=0.1Am

C

I,A7=

A57.1=

B

I,A7=

A57.1=5.1V

B

sgnitaR

nimpytxam

tinU

5V

Continued on next page.

61099TS (KOTO) TA-1386 No.5957–1/4

2SC5450

Continued from preceding page.

retemaraPlobmySsnoitidnoC

niaGtnerruCCD

emiTegarotSt

emiTllaFt

hEF1VECI,V5=
hEF2VECI,V5=

I

gts

C

I

f

C

Switching Time Test Circuit

A1=

C

A7=

C

I,A6=
I,A6=

I,A0.1=

1B
1B

2B

I,A0.1=

2B

sgnitaR

nimpytxam

5103

47
A5.2–=
A5.2–=

tinU

0.3sµ

2.0sµ

PW=20µs
D.C.≤1%

INPUT

50Ω

10

9

8
7

–A

C

6
5

4
3

Collector Current, I

2
1

0

024681013579

V

R

VBE=–2V

I

B1

I

B2

R

100µF

IC-

OUTPUT

B

+

470µF

V

CE

1.8A

2.0A

+

VCC=200V

1.6A

RL=33.3Ω

1.4A

1.2A

1.0A

0.8A

0.6A

0.4A

0.2A

I

B

Collector-to-Emitter Voltage, VCE–V

10

VCE=5V

9

8

–A

7

C

6

5

4

3

Collector Current, I

2

=

0

1
0

0 0.2 0.4 0.6 0.8 1.0 1.2

IC-

V

Ta=120°C

BE

25°C

40°C

-

Base-to-Emitter Voltage, VBE–V

100

7
5

Ta=120°C

3

FE

2

10

7
5

DC Current Gain, h

3
2

1.0

0.1

25°C

40°C

-

2357

hFE-

357

Collector Current, IC– A Collector Current, IC–A

I

C

VCE=5V

2

1.0

10

10

I

/

IB=5

C

7
5

3

–V

2

1.0

CE(sat)

7
5

3
2

40°C

-

Ta=

0.1
7
5

120°C

Collector-to-Emitter

Saturation Voltage, V

3
2

0.01
2357

0.1

V

CE(sat

25°C

357

-

I

)

C

1.0

2

10

No.5955–2/4