Sanyo 2SC5420 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

Inverter Lighting Applications

Ordering number:EN5762

2SC5420

Features

· High breakdown voltage (V

· High reliability (Adoption of HVP process).

· Adoption of MBIT process.

CBO

=1000V).

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

PC

C

Package Dimensions

unit:mm

2069B

[2SC5420]

10.2

0.8

9.93.0

123

0.8

2.55

OBC
OEC
OBE

Tc=25˚C

1.2

2.55

2.552.55

8.8

1.5max

1.35

2.7

4.5

1.3

1.4

0 to 0.3

0.4

1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD

0001V
054V
9V
5A
01A

57.1W
05W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloC

egatloVniatsaSrettimE-ot-rotcelloCV

tnerruCffotuCrettimEI

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

I
I

V

OBC

V

SEC

I

)sus(OEC

C

V

OBE

I

)tas(EC

C

I

)tas(EB

C

I,V054=

BC
EC

BE

0=01Aµ

E

R,V0001=

0=0.1Am

EB

I,Am001=

0=054V

B

I,V9=

0=0.1Am

C

I,A5.2=

A5.0=

B

I,A5.2=

A5.0=5.1V

B

21599TH (KT)/O1397TS (KOTO) TA-1037 No.5762–1/4

nimpytxam

sgnitaR

tinU

0.1V

Continued on next page.

2SC5420

Continued from preceding page.

retemaraPlobmySsnoitidnoC

niaGtnerruCCD

emiTegarotSt

emiTllaFt

hEF1VECI,V5=
hEF2

V

EC

I

gts

C

I

f

C

Switching Time T est Circuit

R

C

I

B1

V

OUT

I

B2

V

CC

0.1V

I

B1

0.9 V

OUT

OUT

t

stgtf

I

V

B2

OUT

A3.0=

C

I,V5=

A0.2=01

C

I,A5.2=
I,A5.2=

I,A5.0=

1B
1B

2B

I,A5.0=

2B

sgnitaR

nimpytxam

030405

A0.1–=
A0.1–=

tinU

5.2sµ

51.0sµ

I

– V

10

8

– A

C

6

4

Collector Current, I

2

0

0246810

C

2.0A

Collector-to-Emitter Voltage, V

h

100

7

Ta=120°C

5
3

FE

2

10

7
5

3

DC Current Gain, h

2

1.0
7

5

25°C

–40°C

357 357 357

0.1 1.0

FE

22

Collector Current,I

1.8A

– I

CE

1.6A

C

C

1.4A

– A

CE

1.2A

– V

1.0A

0.8A

0.6A

0.4A

0.2A

=

I

B

VCE=5V

0

10

I

– V

6

5

– A

4

C

3

2

Collector Current, I

1

0

0 0.2 0.4 0.6 1.00.8 1.41.2

C

Base-to-Emitter Voltage, V

V

10

– V

CE(sat)

1.0

0.1

Collector-to-Emitter Saturation Voltage, V

7
5

3
2

7
5

3
2

=

Ta

–40°C

7

25°C

5

0.1 1.0 10

CE(sat

120°C

Collector Current,I

Ta=120°C

)

BE

25°C

– I

–40°C

BE

C

– A

C

2

– V

35723 57357

VCE=5V

I

/

IB=5

C

No.5762–2/4