SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Inverter Lighting Applications
Ordering number:EN5762
2SC5420
Features
· High breakdown voltage (V
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
CBO
=1000V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2069B
[2SC5420]
10.2
0.8
9.93.0
123
0.8
2.55
OBC
OEC
OBE
Tc=25˚C
1.2
2.55
2.552.55
8.8
1.5max
1.35
2.7
4.5
1.3
1.4
0 to 0.3
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
0001V
054V
9V
5A
01A
57.1W
05W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
egatloVniatsaSrettimE-ot-rotcelloCV
tnerruCffotuCrettimEI
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
I
I
V
OBC
V
SEC
I
)sus(OEC
C
V
OBE
I
)tas(EC
C
I
)tas(EB
C
I,V054=
BC
EC
BE
0=01Aµ
E
R,V0001=
0=0.1Am
EB
I,Am001=
0=054V
B
I,V9=
0=0.1Am
C
I,A5.2=
A5.0=
B
I,A5.2=
A5.0=5.1V
B
21599TH (KT)/O1397TS (KOTO) TA-1037 No.5762–1/4
nimpytxam
sgnitaR
tinU
0.1V
Continued on next page.
2SC5420
Continued from preceding page.
retemaraPlobmySsnoitidnoC
niaGtnerruCCD
emiTegarotSt
emiTllaFt
hEF1VECI,V5=
hEF2
V
EC
I
gts
C
I
f
C
Switching Time T est Circuit
R
C
I
B1
V
OUT
I
B2
V
CC
0.1V
I
B1
0.9 V
OUT
OUT
t
stgtf
I
V
B2
OUT
A3.0=
C
I,V5=
A0.2=01
C
I,A5.2=
I,A5.2=
I,A5.0=
1B
1B
2B
I,A5.0=
2B
sgnitaR
nimpytxam
030405
A0.1–=
A0.1–=
tinU
5.2sµ
51.0sµ
I
– V
10
8
– A
C
6
4
Collector Current, I
2
0
0246810
C
2.0A
Collector-to-Emitter Voltage, V
h
100
7
Ta=120°C
5
3
FE
2
10
7
5
3
DC Current Gain, h
2
1.0
7
5
25°C
–40°C
357 357 357
0.1 1.0
FE
22
Collector Current,I
1.8A
– I
CE
1.6A
C
C
1.4A
– A
CE
1.2A
– V
1.0A
0.8A
0.6A
0.4A
0.2A
=
I
B
VCE=5V
0
10
I
– V
6
5
– A
4
C
3
2
Collector Current, I
1
0
0 0.2 0.4 0.6 1.00.8 1.41.2
C
Base-to-Emitter Voltage, V
V
10
– V
CE(sat)
1.0
0.1
Collector-to-Emitter Saturation Voltage, V
7
5
3
2
7
5
3
2
=
Ta
–40°C
7
25°C
5
0.1 1.0 10
CE(sat
120°C
Collector Current,I
Ta=120°C
)
BE
25°C
– I
–40°C
BE
C
– A
C
2
– V
35723 57357
VCE=5V
I
/
IB=5
C
No.5762–2/4