SANYO 2SC5417 Datasheet

2SC5417
Ordering number : EN5817
Inverter Lighting Applications
NPN Triple Diffused Planar Silicon Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Package Dimensions
unit: mm
2079B-TO220FI (LS)
[2SC5417]
SANYO : TO220FI (LS)
1 : Base 2 : Collector 3 : Emitter
3.5
7.2
16.0
16.1
3.6
10.0
0.9
1.2
14.0
0.75
4.5
2.8
0.6
0.7
2.4
2.552.55
123
3.2
Specifications Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
1200 V
Collector-to-Emitter Voltage V
CEO
600 V
Emitter-to-Base Voltage V
EBO
9V
Collector Current I
C
3A
Collector Current (Pulse) I
CP
6A
Collector Dissipation P
C
2W
Tc=25°C 25 W Junction Temperature Tj 150 °C Storage Temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
Collector Cutoff Current I
CBO
VCB=600V, IE=0 10 µA Collector Cutoff Current I
CES
VCE=1200V, RBE=0 1.0 mA Collector Sustain Voltage V
CEO(sus)IC
=100mA, IB=0 600 V
Emitter Cutoff Current I
EBO
VEB=9V, IC=0 1.0 mA C-E Saturation Voltage V
CE(sat)
IC=1.5A, IB=0.3A 1.0 V B-E Saturation Voltage V
BE(sat)
IC=1.5A, IB=0.3A 1.5 V DC Current Gain h
FE(1)
VCE=5V, IC=0.1A 30 40 50
h
FE(2)
VCE=5V, IC=1.0A 10 Storage Time t
stg
IC=1.5A, IB1=0.3A, IB2=–0.6A 2.5 µs Fall Time t
f
IC=1.5A, IB1=0.3A, IB2=–0.6A 0.15 µs
Features
• High breakdown voltage.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Switching Time Test Circuit
2SC5417
No.5817-2/4
I
B1
I
B2
V
OUT
R
C
V
CC
I
B1
0.1 V
OUT
I
B2
V
OUT
t
stg
t
f
0.9 V
OUT
DC Current Gain, h
FE
Collector Current,I
C
– A
Collector Current,I
C
– A
Collector Current, I
C
– A
h
FE
– I
C
Collector-to-Emitter Voltage, V
CE
– V
I
C
– V
CE
Collector Current, I
C
– A
I
C
– V
BE
V
CE(sat
)
– I
C
Collector Current,I
C
– A
Base-to-Emitter Voltage, V
BE
– V
Collector-to-Emitter Saturation Voltage, V
CE(sat)
– V
V
BE(sat
)
– I
C
Collector Current,I
C
– A
Base-to-Emitter Saturation Voltage, V
BE(sat)
– V
Switching Time, SW Time
µs
SW Time – I
C
0
0 1 2 3 4 5 6 7 8 9 10
1
2
3
5
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
2
3
4
1.0
0.01 0.1 1.0
10
7
2
3
5
100
7
2
3
5
7
2 3 5 7 2 3 5 2 3 57
1.0
10
2
3
5
2
3
5
7
7
0.1
2
3
0.01
5
7
0.01 0.1 1.0
7 2 3 5 7 2 3 5 2 3 57
0.1
0.01 0.1
1.0
1.0
7
2
3
5
2
3
5
7
10
7
2 3 5 7 2 3 5 2 3 57
0.1 1.0
7 2 3 5 7 2 3 5
1.0
10
2
3
5
5
2
3
5
7
7
0.1 7
I
B
=
0
VCE=5V
VCC=200V I
C/IB1
=
5
I
B2/IB1
=2
R
load
Ta=120°C
25°C
40°C
25°C
–40°C
–40°C
25°C
Ta=120°C
Ta=120°C
t
f
t
stg
2.0A
0.2A
0.4A
0.6A
0.8A
1.0A
1.2A
1.8A
0.05A
0.1A
1.4A
1.6A
VCE=5V
I
C
/
IB=5
I
C
/
IB=5
120°C
Ta
=
–40°C
25°C
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