SANYO 2SC5417 Datasheet

2SC5417

Ordering number : EN5817

Inverter Lighting Applications

NPN Triple Diffused Planar Silicon Transistor

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

51598TS (KOTO) TA-1043 No.5817-1/4

Package Dimensions

unit: mm

2079B-TO220FI (LS)

[2SC5417]

SANYO : TO220FI (LS)

1 : Base
2 : Collector
3 : Emitter

3.5

7.2

16.0

16.1

3.6

10.0

0.9

1.2

14.0

0.75

4.5

2.8

0.6

0.7

2.4

2.552.55

123

3.2

Specifications
Absolute Maximum Ratings

at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage V

CBO

1200 V

Collector-to-Emitter Voltage V

CEO

600 V

Emitter-to-Base Voltage V

EBO

9V

Collector Current I

C

3A

Collector Current (Pulse) I

CP

6A

Collector Dissipation P

C

2W

Tc=25°C 25 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Ratings

min typ max

Unit

Collector Cutoff Current I

CBO

VCB=600V, IE=0 10 µA
Collector Cutoff Current I

CES

VCE=1200V, RBE=0 1.0 mA
Collector Sustain Voltage V

CEO(sus)IC

=100mA, IB=0 600 V

Emitter Cutoff Current I

EBO

VEB=9V, IC=0 1.0 mA
C-E Saturation Voltage V

CE(sat)

IC=1.5A, IB=0.3A 1.0 V
B-E Saturation Voltage V

BE(sat)

IC=1.5A, IB=0.3A 1.5 V
DC Current Gain h

FE(1)

VCE=5V, IC=0.1A 30 40 50

h

FE(2)

VCE=5V, IC=1.0A 10
Storage Time t

stg

IC=1.5A, IB1=0.3A, IB2=–0.6A 2.5 µs
Fall Time t

f

IC=1.5A, IB1=0.3A, IB2=–0.6A 0.15 µs

Features

• High breakdown voltage.

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.

Switching Time Test Circuit

2SC5417

No.5817-2/4

I

B1

I

B2

V

OUT

R

C

V

CC

I

B1

0.1 V

OUT

I

B2

V

OUT

t

stg

t

f

0.9 V

OUT

DC Current Gain, h

FE

Collector Current,I

C

– A

Collector Current,I

C

– A

Collector Current, I

C

– A

h

FE

– I

C

Collector-to-Emitter Voltage, V

CE

– V

I

C

– V

CE

Collector Current, I

C

– A

I

C

– V

BE

V

CE(sat

)

– I

C

Collector Current,I

C

– A

Base-to-Emitter Voltage, V

BE

– V

Collector-to-Emitter Saturation Voltage, V

CE(sat)

– V

V

BE(sat

)

– I

C

Collector Current,I

C

– A

Base-to-Emitter Saturation Voltage, V

BE(sat)

– V

Switching Time, SW Time

– µs

SW Time – I

C

0

0 1 2 3 4 5 6 7 8 9 10

1

2

3

5

4

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

1

2

3

4

1.0

0.01 0.1 1.0

10

7

2

3

5

100

7

2

3

5

7

2 3 5 7 2 3 5 2 3 57

1.0

10

2

3

5

2

3

5

7

7

0.1

2

3

0.01

5

7

0.01 0.1 1.0

7 2 3 5 7 2 3 5 2 3 57

0.1

0.01 0.1

1.0

1.0

7

2

3

5

2

3

5

7

10

7

2 3 5 7 2 3 5 2 3 57

0.1 1.0

7 2 3 5 7 2 3 5

1.0

10

2

3

5

5

2

3

5

7

7

0.1
7

I

B

=

0

VCE=5V

VCC=200V
I

C/IB1

=

5

I

B2/IB1

=2

R

load

Ta=120°C

25°C

–

40°C

25°C

–40°C

–40°C

25°C

Ta=120°C

Ta=120°C

t

f

t

stg

2.0A

0.2A

0.4A

0.6A

0.8A

1.0A

1.2A

1.8A

0.05A

0.1A

1.4A

1.6A

VCE=5V

I

C

/

IB=5

I

C

/

IB=5

120°C

Ta

=

–40°C

25°C