Sanyo 2SC5416LS Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Inverter Lighting Applications
Ordering number:ENN5696A
2SC5416LS
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
123
10.0
3.2
Features
· High breakdown voltage.
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)eslup(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta=25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrotcelloCI
egatloVnoitarutaSrotcelloCV
tnerruCffotuCrettimEI
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
niaGtnerruCCD
emiTegarotSt
emiTllaFt
OBC
OEC
OBE
C
PC
C
Tc=25˚C
V
OBC
SEC
OBE
hEF1VECI,V5=
hEF2VECI,V5=
gts
f
BC
V
EC
I
)sus(OEC
C
V
BE
I
)tas(EC
C
I
)tas(EB
C
I
C
I
C
Package Dimensions
unit:mm
2079D
I,V054=
0=01Aµ
E
R,V0001=
0=0.1Am
EB
I,Am001=
0=054V
B
I,V9=
0=0.1Am
C
I,A2=
A4.0=0.1V
B
I,A2=
A4.0=5.1V
B
A1.0=030405
C
A5.1=01
C
I,A2=
I,A2=
I,A4.0=
1B
1B
2B
I,A4.0=
2B
[2SC5416]
1:Base
2:Collector
3:Emitter
SANYO:TO-220FI (LS)
0001V
054V
9V
4A
8A
2W
52W
sgnitaR
nimpytxam
A8.0–=5.2sµ
A8.0–=51.0sµ
˚C
˚C
tinU
O3101TS KT/51598TS (KOTO) TA-1059 No.5696-1/4
Switching Time Test Circuit
R
C
I
B1
V
OUT
I
B2
5
2.0A
4
– A
C
3
2
Collector Current, I
1
1.8A
V
CC
I
C
1.6A
– V
0.1 V
CE
I
OUT
2SC5416LS
B1
I
B2
0.9 V
OUT
V
OUT
t
t
stg
f
I
– V
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0.1A
0.05A
– A
C
Collector Current, I
5
4
3
2
1
C
a= 120
T
BE
VCE=5V
°C
25°C
40°C
–
=
I
0
0
012345678910
C
– A
C
C
– A
C
CE
– V
Collector-to-Emitter Voltage, V
h
– I
25°C
–40
FE
°C
°C
100
7
5
3
FE
2
10
7
5
DC Current Gain, h
3
2
1.0
7
0.01 0.1 1.0
Ta=120
23 57 23 5 23 577
Collector Current,I
10
I
/
IB=5
C
7
– V
5
BE(sat)
3
2
1.0
=
–40
Ta
7
5
25°C
3
2
0.1
7 2357 235 23577
0.01 0.1 1.0
Base-to-Emitter Saturation Voltage, V
V
°C
°C
120
Collector Current,I
BE(sat
– I
)
B
VCE=5V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
C
– A
C
– A
C
BE
C
– V
25
°C
°C
–40
Ta=120
VCC=200V
=
I
5
C/IB1
=2
I
B2/IB1
R
load
°C
Base-to-Emitter Voltage, V
10
– V
I
/
IB=5
C
7
5
3
CE(sat)
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7 2357 235 23577
0.01 0.1 1.0
Collector-to-Emitter Saturation Voltage, V
10
7
5
3
– µs
2
1.0
7
5
3
2
Switching Time, SW Time
0.1
7
5
7
0.1 1.0
V
Collector Current,I
SW Time – I
t
stg
t
f
357 2357
2
CE(sat
– I
)
Collector Current,I
No.5696-2/4
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