SANYO 2SC5414 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Transistor

High-Frequency

Low-Noise Amplifier Applications

Ordering number:ENN5910

2SC5414

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· High gain : S21e2=9.5dB typ (f=1GHz).

· High cutoff frequency : fT=6.7GHz typ.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

C

Package Dimensions

unit:mm

2004B

[2SC5414]

5.0

4.0

0.45

0.5

2.0

123

1.3

0.6

1.3

0.45

OBC
OEC
OBE

4.0

5.0

0.44

14.0

1 : Base
2 : Emitter
3 : Collector
SANYO : NP

02V
21V
2V
001Am
004Wm

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaG

ecnaticapaCtuptuOboCV

ecnaticapaCrefsnarTesreveRerCV

niaGrefsnarTdrawroF|e12S|

erugiFesioNFN

* The 2SC5414 is classified by 30mA hFE as follows :

hEF1VECI,V5=
hEF2VECI,V5=

V

OBC

V

OBE

f

V

T

2

V
V

I,V01=

BC
BE

EC
BC
BC
EC
EC

0=0.1Aµ

E

I,V1=

0=01Aµ

C

Am03=

C

Am07=

C

I,V5=

Am03=

C

zHM1=f,V5=
zHM1=f,V5=

I,V5=

C

I,V5=

C

081E09072F531

zHG1=f,Am03=

zHG1=f,Am7=

30300TS (KOTO) TA-1023 No.5910–1/6

sgnitaR

nimpytxam

*09*072

07

57.6zHG

0.15.1Fp

6.0Fp

85.9Bd

1.10.2Bd

tinU

–mA

C

2SC5414

50

IC-

0.35mA

40

30

V

CE

100

IC-

V

BE

0.30mA

0.25mA

0.20mA

–mA

C

80

VCE=5V

60

2V

20

Collector Current, I

10

0

20

Collector-to-Emitter Voltage, VCE–V

7
5

3

FE

2

100

7
5

DC Current Gain, h

3
2

10

32

75

1.0 10 10 0

10

7
5

3
2

33322

0.15mA

0.10mA

0.05mA

I

=0

46810

hFE-

I

C

B

VCE=5V

2V

7575

Cob

-

V

CB

f=1MHz

40

Collector Current, I

20

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter Voltage, VBE–V

fT-

I

10

7

– GHzReverse Transfer Capacitance, Cre – pF

T

5

3

2

C

VCE=5V

2V

Gain-Bandwidth Product, f

1.0

1.0 10 100

10

7
5

3
2

2

332

7575

Collector Current, IC–mACollector Current, IC–mA

Cre

-

V

CB

f=1MHz

1.0
7

5

3

Output Capacitance, Cob – pF

2

0.1

7

10

8

6

4

Noise Figure, NF – dB

2

0

7

2753

0.1 1.0

1.0

1.0
7
5

3
2

0.1

7

0.1 1.0

12

10

–dB

2

8

6

4

2753

Collector-to-Base Voltage, VCB-- VCollector-to-Base Voltage, VCB-- V

275323

S21e2 -- I

C

VCE=5V

2V

NF

275323

-

I

C

10

f=1GHz f=1GHz

VCE=2V

5V

2

Forward Transfer Gain, S21e

2

32

Collector Current, IC– mA Collector Current, IC–mA

7

5

10 10 0

3

75

0

1.0

2

32

77

5

10 100

3

10

75

No.5910–2/6