SANYO 2SC5388 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

High-Voltage Switching Applications

Ordering number:ENN6283

2SC5388

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

16.0

Features

· High speed (Adoption of MBIT process).

· High breakdown voltage (V

CBO

=1500V).

· High reliability (Adoption of HVP process).

· On-chip damper diode.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

B

C

Package Dimensions

unit:mm

2039D

[2SC5388]

3.4

21.0

4.0

12

5.45

OBC
OEC
OBE

PC

Tc=25˚C

2.8

2.0

1.0

3

3.5

5.45

5.6

3.1

5.0

8.0

22.0

2.0

2.0

20.4

0.6

1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML

0051V
007V
5V
5A
01A
1A

0.3W
05W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloC

tnerruCffotuCrettimEI

niaGtnerruCCD

I

hEF1VECI,V5=
hEF2VECI,V5=

V

OBC
OBE

BC

V

BE

I,V007=

0=1.0Am

E

I,V5=

0=006Am

C

A1=

C

A5=

C

sgnitaR

nimpytxam

001032
05051

tinU

Continued on next page.

10700TS (KOTO) TA-1738 No.6283–1/4

2SC5388

Continued from preceding page.

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egatloVniatsuSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVdrawroFedoiDV

emiTllaFt

emiTegarotSt

Switching Time Test Circuit

)sus(ICI,Am001=

OEC

)tas(ICI,A5=

EC

)tas(ICI,A5=

EB

I

OBC)RB(

C

ICEA5= 0.2V

F

I

f

C

I

gts

C

0=007V

B

A5.0=

B

A5.0=0.2V

B

I,Am1=

0=0051V

E

I,A5=
I,A5=

I,A5.0=

1B
1B

2B

I,A5.0=

2B

sgnitaR

nimpytxam

V,A5.2–=
V,A5.2–=

R,V002=

CC
CC

04= Ω

L

R,V002=

04= Ω

L

tinU

5.1V

8.0sµ
3sµ

I

PW=20µs
D.C.≤1%

INPUT

50Ω

5.0

90mA

80mA

4.5

70mA

4.0

60mA

50mA

3.5

–A

C

3.0

100mA

2.5

2.0

1.5

Collector Current, I

1.0

0.5
0

02 4681013579

Collector-to-Emitter Voltage, VCE–V

1000

7
5

3
2

FE

100

10

DC Current Gain, h

1.0

Ta=120

7
5

3
2

7
5

3
2

25

--40°C

B1

I

B2

R

B

V

R

R1R

++

VBE=--5V

100µF 470µF

I

-- V

C

40m

CE

A

30mA

20mA

10mA

5mA

h

-- I

FE

C

°C

°C

325

73257

Collector Current, IC–A

1.0

T.U.T

2

VCE=5V

OUTPUT

IB=0

IT00791

100.1

IT00793

R

L

VCC=200V

I

-- V

C

10

VCE=5V

9

8

–A

7

C

6

5

4

3

Collector Current, I

2

1
0

0 0.2 0.4 0.6 0.8 1.41.0 1.2 1.6 1.8 2.42.0 2.2

BE

25°C

Ta=120°C

Base-to-Emitter Voltage, VBE–V

10

7
5

3

(sat) – V

2

CE

25°C

1.0
7

5

3

Collector-to-Emitter

Saturation Voltage, V

2

0.1

23 57 23 57

0.1

VCE(sat) -- I

Ta=--40

°C

°C

120

Collector Current, IC–A

1.0 10

--40°C

IT00792

C

IC / IB=20

IT00794

No.6283–2/4