SANYO 2SC5388 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Switching Applications
Ordering number:ENN6283
2SC5388
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
16.0
Features
· High speed (Adoption of MBIT process).
· High breakdown voltage (V
CBO
=1500V).
· High reliability (Adoption of HVP process).
· On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
B
C
Package Dimensions
unit:mm
2039D
[2SC5388]
3.4
21.0
4.0
12
5.45
OBC
OEC
OBE
PC
Tc=25˚C
2.8
2.0
1.0
3
3.5
5.45
5.6
3.1
5.0
8.0
22.0
2.0
2.0
20.4
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
0051V
007V
5V
5A
01A
1A
0.3W
05W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
tnerruCffotuCrettimEI
niaGtnerruCCD
I
hEF1VECI,V5=
hEF2VECI,V5=
V
OBC
OBE
BC
V
BE
I,V007=
0=1.0Am
E
I,V5=
0=006Am
C
A1=
C
A5=
C
sgnitaR
nimpytxam
001032
05051
tinU
Continued on next page.
10700TS (KOTO) TA-1738 No.6283–1/4
2SC5388
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVniatsuSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVdrawroFedoiDV
emiTllaFt
emiTegarotSt
Switching Time Test Circuit
)sus(ICI,Am001=
OEC
)tas(ICI,A5=
EC
)tas(ICI,A5=
EB
I
OBC)RB(
C
ICEA5= 0.2V
F
I
f
C
I
gts
C
0=007V
B
A5.0=
B
A5.0=0.2V
B
I,Am1=
0=0051V
E
I,A5=
I,A5=
I,A5.0=
1B
1B
2B
I,A5.0=
2B
sgnitaR
nimpytxam
V,A5.2–=
V,A5.2–=
R,V002=
CC
CC
04= Ω
L
R,V002=
04= Ω
L
tinU
5.1V
8.0sµ
3sµ
I
PW=20µs
D.C.≤1%
INPUT
50Ω
5.0
90mA
80mA
4.5
70mA
4.0
60mA
50mA
3.5
–A
C
3.0
100mA
2.5
2.0
1.5
Collector Current, I
1.0
0.5
0
02 4681013579
Collector-to-Emitter Voltage, VCE–V
1000
7
5
3
2
FE
100
10
DC Current Gain, h
1.0
Ta=120
7
5
3
2
7
5
3
2
25
--40°C
B1
I
B2
R
B
V
R
R1R
++
VBE=--5V
100µF 470µF
I
-- V
C
40m
CE
A
30mA
20mA
10mA
5mA
h
-- I
FE
C
°C
°C
325
73257
Collector Current, IC–A
1.0
T.U.T
2
VCE=5V
OUTPUT
IB=0
IT00791
100.1
IT00793
R
L
VCC=200V
I
-- V
C
10
VCE=5V
9
8
–A
7
C
6
5
4
3
Collector Current, I
2
1
0
0 0.2 0.4 0.6 0.8 1.41.0 1.2 1.6 1.8 2.42.0 2.2
BE
25°C
Ta=120°C
Base-to-Emitter Voltage, VBE–V
10
7
5
3
(sat) – V
2
CE
25°C
1.0
7
5
3
Collector-to-Emitter
Saturation Voltage, V
2
0.1
23 57 23 57
0.1
VCE(sat) -- I
Ta=--40
°C
°C
120
Collector Current, IC–A
1.0 10
--40°C
IT00792
C
IC / IB=20
IT00794
No.6283–2/4
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