Ordering number:EN5541A
NPN Epitaxial Planar Silicon Transistor
2SC5375
VHF to UHF Band OSC,
High-Frequency Amplifiers Applications
Features |
Package Dimensions |
· High gain : S21e 2=10dB typ (f=1GHz). |
unit:mm |
· High cutoff frequency :Tf=5.2GHz typ. |
2059B |
Specifications
Absolute Maximum Ratings at Ta = 25˚C
|
0.425 |
2.1 |
1.250 |
|
0.425 |
[2SC5375]
0.3 |
|
|
0.15 |
0.2 |
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3 |
|
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0 to 0.1 |
1 |
2 |
0.3 |
|
0.6 |
0.65 |
0.65 |
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|
0.9 |
|
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2.0 |
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1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
20 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
10 |
V |
Emitter-to-Base Voltage |
VEBO |
|
2 |
V |
Collector Current |
IC |
|
100 |
mA |
Collector Dissipation |
PC |
|
150 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
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||||
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|
min |
typ |
max |
|
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Collector Cutoff Current |
ICBO |
VCB=10V, IE=0 |
|
|
1.0 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=1V, IC=0 |
|
|
10 |
µA |
DC Current Gain |
hFE1 |
VCE=3V, IC=7mA |
110 |
|
180 |
|
hFE2 |
VCE=3V, IC=30mA |
100 |
|
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Gain-Bandwidth Product |
fT |
VCE=3V, IC=7mA |
3 |
5.2 |
|
GHz |
Output Capacitance |
Cob |
VCB=3V, f=1MHz |
|
1.0 |
1.5 |
pF |
Reverse Transfer Capacitance |
Cre |
VCB=3V, f=1MHz |
|
0.7 |
|
pF |
Forward Transfer Gain |
| S21e |2 |
VCE=3V, IC=7mA, f=1GHz |
8 |
10 |
|
dB |
Noise Figure |
NF |
VCE=3V, IC=7mA, f=1GHz |
|
1.4 |
2.5 |
dB |
Marking : NA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/N2996TS (KOTO) TA-0824 No.5541–1/5
2SC5375
No.5541–2/5