Ordering number:EN5512A
NPN Epitaxial Planar Silicon Transistor
2SC5347
High-Frequency Semi-Power Output Stage,
Low-Noise Medium Output Amplifiers Applications
Features
· High frequency medium output amplification
(VCE=5V, IC=50mA)
:fT=4.7GHz typ (f=1GHz).
:S21e 2=8dB typ (f=1GHz).
:NF=1.8dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2038A
[2SC5347]
4.5
|
1.6 |
|
1.5 |
|
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|
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|
2.5 |
4.25max |
0.4 |
0.5 |
1.0 |
|
3 |
2 |
1 |
0.4 |
1.5 |
|
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|
3.0 |
1 |
: Base |
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|
0.75 |
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2 |
: Collector |
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3 |
: Emitter |
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SANYO : PCP (Bottom view)
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
20 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
12 |
V |
Emitter-to-Base Voltage |
VEBO |
|
2 |
V |
Collector Current |
IC |
|
150 |
mA |
Collector Dissipation |
PC |
Mounted on ceramic board (250mm2× 0.8mm) |
1.3 |
W |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
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|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
|
Conditions |
|
|
|
Ratings |
|
Unit |
||
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min |
typ |
max |
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Collector Cutoff Current |
ICBO |
VCB=10V, IE=0 |
|
|
|
|
1.0 |
µA |
|||
Emitter Cutoff Current |
IEBO |
VEB=1V, IC=0 |
|
|
|
|
10 |
µA |
|||
DC Current Gain |
hFE |
VCE=5V, IC=50mA |
|
|
60* |
|
270* |
|
|||
Gain-Bandwidth Product |
fT |
VCE=5V, IC=50mA |
|
|
3 |
4.7 |
|
GHz |
|||
Output Capacitance |
Cob |
VCB=10V, f=1MHz |
|
|
|
1.3 |
2.0 |
pF |
|||
Reverse Transfer Capacitance |
Cre |
VCB=10V, f=1MHz |
|
|
|
0.9 |
|
pF |
|||
Forward Transfer Gain |
| S21e |2 |
VCE=5V, IC=50mA, f=1GHz |
|
|
6 |
8 |
|
dB |
|||
Noise Figure |
NF |
VCE=5V, IC=50mA, f=1GHz |
|
|
|
1.8 |
3.0 |
dB |
|||
* : The 2SC5347 is classified by 50mA hFE as follows : |
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60 |
D 120 |
90 E 180 |
135 F |
270 |
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Marking : CZ |
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hFE rank : D, E, F |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/91296YK (KOTO) TA-0689 No.5512–1/5
2SC5347
No.5512–2/5