Sanyo 2SC5302 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:EN5363B
2SC5302
16.0
21.0
Features
· Fast speed (tf=100ns typ).
· High breakdown voltage (V
CBO
=1500V).
· High reliability (adoption of HVP process).
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)eslup(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2039D
[2SC5302]
3.4
5.0
4.0
12
5.45
OBC
OEC
OBE
Tc=25˚C
2.8
2.0
1.0
3
3.5
5.45
5.6
3.1
8.0
22.0
2.0
2.0
20.4
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
0051V
008V
6V
51A
53A
3W
57W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
egatloVniatsuSrotcelloCV
tnerruCffotuCrettimEI
tnerruCffotuCrotcelloCI
niaGtnerruCCD
hEF1VECI,V5=
hEF2VECI,V5=
V
SEC
OBE
OBC
EC
I
)sus(OEC
C
V
BE
V
BC
R,V0051=
0=0.1Am
EB
I,Am001=
0=008V
B
I,V4=
0=0.1Am
C
I,V008=
0=01Aµ
E
A0.1=0203
C
A21=47
C
sgnitaR
nimpytxam
tinU
Continued on next page.
22299TS (KOTO) TA-0791 No.5363–1/4
2SC5302
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
I,A21=
)tas(EC
C
I
)tas(EB
C
I
gts
C
I
f
C
A3=5V
B
I,A21=
A3=5.1V
B
I,A8=
B
I,A8=
B
I,A6.1=1
B
I,A6.1=1
B
sgnitaR
nimpytxam
A2.3–=20.3sµ
A2.3–=22.0sµ
tinU
–A
C
Collector Current, I
Collector-to-Emitter Voltage, VCE –V
FE
DC Current Gain,h
–A
C
Collector Current, I
Base-to-Emitter Voltage, VBE –V
–V
CE (sat)
Collector–to–Emitter
Saturation Voltage, V
Collector Current, IC–A
Collector Current, IC–A
No.5363–2/4
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