Sanyo 2SC5302 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Triple Diffused Planar Silicon Transistor

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Ordering number:EN5363B

2SC5302

22299TS (KOTO) TA-0791 No.5363–1/4

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2039D

[2SC5302]

Features

· Fast speed (t

f

=100ns typ).

· High breakdown voltage (V

CBO

=1500V).

· High reliability (adoption of HVP process).

· Adoption of MBIT process.

˚C

˚C

Electrical Characteristics at Ta = 25˚C

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PML

Tc=25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC

0051V

egatloVrettimE-ot-rotcelloCV

OEC

008V

egatloVesaB-ot-rettimEV

OBE

6V

tnerruCrotcelloCI

C

51A

)eslup(tnerruCrotcelloCI

PC

53A

noitapissiDrotcelloCP

C

3W

57W

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

retemaraPlobmySsnoitidnoC

sgnitaR

tinU

nimpytxam

tnerruCffotuCrotcelloCI

SEC

V

EC

R,V0051=

EB

0=0.1Am

egatloVniatsuSrotcelloCV

)sus(OEC

I

C

I,Am001=

B

0=008V

tnerruCffotuCrettimEI

OBE

V

BE

I,V4=

C

0=0.1Am

tnerruCffotuCrotcelloCI

OBC

V

BC

I,V008=

E

0=01Aµ

niaGtnerruCCD

h

EF

1V

EC

I,V5=

C

A0.1=0203

h

EF

2V

EC

I,V5=

C

A21=47

Continued on next page.

16.0

2.0

2.8

1.0

4.0

21.0

5.0

8.0

22.0

20.4

5.6

3.1

2.0

2.0

0.6

5.45

5.45

12

3

3.5

3.4

2SC5302

No.5363–2/4

Switching Time Test Circuit

retemaraPlobmySsnoitidnoC

sgnitaR

tinU

nimpytxam

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC

I

C

I,A21=

B

A3=5V

egatloVnoitarutaSrettimE-ot-esaBV

)tas(EB

I

C

I,A21=

B

A3=5.1V

emiTegarotSt

gts

I

C

I,A8=

B

I,A6.1=1

B

A2.3–=20.3sµ

emiTllaFt

f

I

C

I,A8=

B

I,A6.1=1

B

A2.3–=22.0sµ

DC Current Gain,h

FE

Collector Current, I

C

–A

Collector Current, I

C

–A

Collector Current, I

C

–A

Collector-to-Emitter Voltage, V

CE

–V

Collector Current, I

C

–A

Base-to-Emitter Voltage, V

BE

–V

Collector–to–Emitter

Saturation Voltage, V

CE (sat)

–V

Continued from preceding page.