Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:ENN5290A
2SC5296
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· High speed : tf=100ns typ.
· High breakdown voltage : V
CBO
=1500V.
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
· On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2039D
[2SC5296]
3.4
5.0
4.0
12
5.45
OBC
OEC
OBE
PC
Tc=25˚C
2.8
2.0
1.0
3
3.5
5.45
5.6
3.1
8.0
22.0
2.0
2.0
20.4
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
0051V
008V
6V
8A
61A
0.3W
06W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
egatloVniatsuSrettimE-ot-rotcelloCV
tnerruCffotuCrettimEI
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
I
I
V
OBC
V
SEC
I
)sus(OEC
C
V
OBE
I
)tas(EC
C
I
)tas(EB
C
I,V008=
BC
EC
BE
0=01Aµ
E
R,V0051=
0=0.1Am
EB
I,Am001=
0=008V
B
I,V4=
0=04031Am
C
I,A5=
A52.1=
B
I,A5=
A52.1=5.1V
B
O1899TS (KT)/11696YK (KOTO) TA-0585 No.5290–1/4
sgnitaR
nimpytxam
Continued on next page.
tinU
5V
2SC5296
Continued from preceding page.
retemaraPlobmySsnoitidnoC
niaGtnerruCCD
emiTegarotSt
emiTllaFt
hEF1VECI,V5=
hEF2VECI,V5=
I
gts
C
I
f
C
Switching Time Test Circuit
A1=
C
A5=
C
I,A4=
I,A4=
I,A8.0=
1B
1B
2B
I,A8.0=
2B
sgnitaR
nimpytxam
5152
47
A6.1–=
A6.1–=
1.02.0sµ
tinU
0.3sµ
No.5290–2/4