Sanyo 2SC5275 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band Low-Noise Amplifier,
OSC Applications
Ordering number:EN5185
2SC5275
0.4
Features
· Low noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
· High gain : S21e2=10dB typ (f=1.5GHz).
· High cutoff frequency : fT=11GHz typ.
· Low-voltage, low-current operation
(VCE=1V, IC=1mA)
: fT=7GHz type.
: S21e2=5.5dB typ (f=1.5GHz).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
* : The 2SC5275 is classified by 10mA hFE as follows :
0213060814090725531
Marking : MN
hFE rank : 3, 4, 5
C
C
h
EF
fT1VECI,V5=
fT2VECI,V1=
Package Dimensions
unit:mm
2018B
[2SC5275]
0.16
3
1
0.95
0.95
1.9
2.9
OBC
OEC
OBE
V
OBC
V
OBE
V
I,V01=
BC
BE
EC
BC
BC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am01=
C
Am01=
C
Am1=
C
zHM1=f,V01=
zHM1=f,V01=
0.5
2.5
1.5
2
0.5
0 to 0.1
1 : Base
1.1
0.8
2 : Emitter
3 : Collector
SANYO : CP
02V
01V
5.1V
03Am
002Wm
˚C
˚C
sgnitaR
nimpytxam
*06*072
811zHG
7zHG
54.07.0Fp
03.0Fp
tinU
Continued on next page.
21599TH (KT)/83095YK (KOTO) TA-0414 No.5185–1/5
Continued from preceding page.
retemaraPlobmySsnoitidnoC
niaGrefsnarTdrawroF
erugiFesioN
2
V
|e12S|
1
EC
2
V
|e12S|
2
1FNVECI,V5=
2FNVECI,V2=
EC
2SC5275
I,V5=
C
I,V1=
C
C
C
sgnitaR
nimpytxam
zHG5.1=f,Am01=
zHG5.1=f,Am1=
zHG5.1=f,Am5=4.10.3Bd
zHG1=f,Am3=9.0Bd
801Bd
5.5Bd
tinU
No.5185–2/5
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