Sanyo 2SC5265LS Specifications
Ordering number : ENN5321A
2SC5265LS
NPN Triple Diffused Planar Silicon Transistor
2SC5265LS
Inverter-Controlled Lighting Applications
Features
•High breakdown voltage(VCBO=1200V).
•High reliability(Adoption of HVP process).
•Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm
2079D
[2SC5265LS]
10.0 |
3.2 |
4.5 |
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2.8 |
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3.5 |
7.2 |
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16.0 |
16.1 |
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0.6 |
3.6 |
0.9 1.2 |
1.2 |
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0.75 |
14.0 |
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0.7 |
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1 2 |
3 |
1 |
: Base |
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2.4 |
2 |
: Collector |
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3 |
: Emitter |
2.55 |
2.55 |
SANYO : TO-220FI(LS) |
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Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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1200 |
V |
Collector-to-Emitter Voltage |
VCEO |
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600 |
V |
Emitter-to-Base Voltage |
VEBO |
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9 |
V |
Collector Current |
IC |
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4 |
A |
Collector Current (Pulse) |
ICP |
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8 |
A |
Collector Dissipation |
PC |
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2 |
W |
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Tc=25°C |
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30 |
W |
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Junction Temperature |
Tj |
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150 |
°C |
Storage Temperature |
Tstg |
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--55 to +150 |
°C |
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Electrical Characteristics at Ta=25°C |
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Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
ICBO |
VCB=600V, IE=0 |
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10 |
μA |
ICES |
VCE=1200V, RBE=0 |
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1.0 |
mA |
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Collector-to-Emitter Sustain Voltage |
VCEO(sus) |
IC=100mA, IB=0 |
600 |
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V |
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Emitter Cutoff Current |
IEBO |
VEB=9V, IC=0 |
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1.0 |
mA |
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3430 / 20599 TH (KT) / 40196 TS (KOTO) TA-0644 No.5321-1/4
2SC5265LS
Continued from preceding page.
Parameter |
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Conditions |
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Ratings |
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Unit |
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min |
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typ |
max |
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Collector-to-Emitter Saturation Voltage |
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VCE(sat) |
IC=2.0A, IB=0.4A |
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1.0 |
V |
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Base-to-Emitter Saturation Voltage |
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VBE(sat) |
IC=2.0A, IB=0.4A |
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1.5 |
V |
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DC Current Gain |
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hFE1 |
VCE=5V, IC=0.3A |
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30 |
40 |
50 |
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hFE2 |
VCE=5V, IC=1.5A |
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10 |
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Storage Time |
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tstg |
IC=2.0A, IB1=0.4A, IB2=--0.8A |
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2.5 |
μs |
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Fall Time |
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tf |
IC=2.0A, IB1=0.4A, IB2=--0.8A |
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0.15 |
μs |
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Switching Time Test Circuit |
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RC |
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IB1 |
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IB1 |
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IB2 |
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VOUT |
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0.9 VOUT |
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IB2 |
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VCC |
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VOUT |
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0.1 VOUT |
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tstg tf |
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IC -- VCE
8
Collector Current, IC -- A
0.8A
6
4
2
1.0A
1.2A
1.4A
1.6A
1.8A 
2.0A
0.6A
0.4A 0.2A
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I |
=0 |
0 |
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B |
0 |
2 |
4 |
6 |
8 |
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10 |
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Collector-to-Emitter Voltage, VCE |
-- |
V ITR08008 |
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7 |
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VCE(sat) -- |
IC |
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IC / IB=5 |
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5 |
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V |
3 |
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-- |
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2 |
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(sat) |
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CE1.0 |
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Collector-to-Emitter |
Saturation Voltage, V |
7 |
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5 |
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3 |
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2 |
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0.1 |
Ta= -- |
40°C |
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°C |
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7 |
25°C |
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120 |
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5 |
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3 |
5 |
7 |
0.1 |
2 |
3 |
5 |
7 |
1.0 |
2 |
3 |
5 |
7 |
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Collector Current, IC -- |
A |
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ITR08010 |
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DC Current Gain, hFE
Collector Current, IC -- A
100
7
5
3
2
10
7
5
3
2
3
5
4
3
2
1
0
0
hFE -- IC
VCE=5V
Ta=120°C
25°C
--40°C
5 |
7 |
0.1 |
2 |
3 |
5 |
7 |
1.0 |
2 |
3 |
5 |
7 |
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Collector Current, IC -- |
A |
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ITR08009 |
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IC -- VBE |
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VCE=5V
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° |
C |
C |
C |
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Ta=120 |
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° |
° |
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25 |
40 |
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-- |
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0.2 |
0.4 |
0.6 |
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0.8 |
1.0 |
1.2 |
1.4 |
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Base-to-Emitter Voltage, VBE -- V |
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ITR08011 |
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No.5321-2/4
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