Sanyo 2SC5265LS Specifications

Ordering number : ENN5321A

2SC5265LS

NPN Triple Diffused Planar Silicon Transistor

2SC5265LS

Inverter-Controlled Lighting Applications

Features

•

High breakdown voltage(V

•

High reliability(Adoption of HVP process).

•

Adoption of MBIT process.

CBO

=1200V).

Package Dimensions

unit : mm

2079D

[2SC5265LS]

10.0

16.1

3.6

123

0.9

0.75

3.2

3.5

7.2

16.0

1.2

14.0

2.4

4.5

2.8

1.2

0.7

1 : Base
2 : Collector

0.6

3 : Emitter

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C30W

2.55

2.55

SANYO : TO-220FI(LS)

1200 V

600 V

9V
4A
8A
2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

I

Collector Cutoff Current
Collector-to-Emitter Sustain Voltage V

Emitter Cutoff Current I

CBO

I

CES

CEO

EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=600V, IE=0 10 µA
VCE=1200V , RBE=0 1.0 mA

(sus) IC=100mA, IB=0 600 V

VEB=9V, IC=0 1.0 mA

Unit

Continued on next page.

11502 TS IM TA-3430 / 20599 TH (KT) / 40196 TS (KOTO) TA-0644

No.5321-1/4

2SC5265LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=2.0A, IB=0.4A 1.5 V

DC Current Gain
Storage Time t

Fall Time t

VCE(sat) IC=2.0A, IB=0.4A 1.0 V

hFE1VCE=5V, IC=0.3A 30 40 50
hFE2VCE=5V, IC=1.5A 10

stg

IC=2.0A, IB1=0.4A, IB2=--0.8A 2.5 µs
IC=2.0A, IB1=0.4A, IB2=--0.8A 0.15 µs

f

Switching Time Test Circuit

Ratings

min typ max

Unit

I

B1

I

B2

8

A

--

0.8A

6

C

4

2

Collector Current, I

1.0A

R

C

V

OUT

IC -- V

1.2A

CE

1.4A

I

B1

I

B2

0.9

V

OUT

V

CC

1.6A

0.1

V

1.8A

OUT

t

stgtf

2.0A

V

OUT

FE

100

hFE -- I

7

5

3

2

Ta=120

25

--40

°C

°C

°C

C

VCE=5V

0.6A

0.4A

0.2A

10

7

DC Current Gain, h

5

I

0

0246810

7

IC / IB=5

5

3
2

Collector-to-Emitter Voltage, V

VCE(sat) -- I

CE --

C

B

ITR08008

V

(sat) -- V

1.0

CE

7
5

3
2

Ta= --40

°C

5

°C

°C

120

7

0.1

Collector Current, I

23 2

77

5

1.0

A

C --

3

ITR08010

Collector-to-Emitter

Saturation V oltage, V

0.1
7

5

3

25

=0

5

3
2

5

4

A

-­C

3

2

Collector Current, I

1

0

72

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

3535 35

72

25

BE

°C

1.0

C --

°C

--40

Collector Current, I

IC -- V

°C

Ta=120

A

Base-to-Emitter V oltage, VBE -- V

7

ITR08009

VCE=5V

ITR08011

No.5321-2/4