SANYO 2SC5264LS Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

Inverter Lighting Applications

Ordering number:ENN5287A

2SC5264LS

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

16.0

14.0

3.6

3.5

7.2

16.1

0.7

2.55

2.55

2.4

1.2

0.9

0.75

0.6

1.2

4.5

2.8

123

10.0

3.2

Features

· High breakdown voltage (V

· High reliability (Adoption of HVP process).

· Adoption of MBIT process.

CBO

=1000V).

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

C

Package Dimensions

unit:mm

2079D

[2SC5264]

OBC
OEC
OBE

PC

Tc=25˚C

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI (LS)

0001V
054V
9V
5A
01A
2W
03W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloC

egatloVniatsuSrettimE-ot-rotcelloCV

tnerruCffotuCrettimEI

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

I
I

V

OBC

V

SEC

I

)sus(OEC

C

V

OBE

I

)tas(EC

C

I

)tas(EB

C

I,V054=

BC
EC

BE

0=01Aµ

E

R,V0001=

0=0.1Am

EB

I,Am001=

0=054V

B

I,V9=

0=0.1Am

C

I,A5.2=

A5.0=

B

I,A5.2=

A5.0=5.1V

B

O3101TS KT/O1899TS (KOTO) TA-1923 No.5287–1/4

sgnitaR

nimpytxam

Continued on next page.

tinU

0.1V

2SC5264LS

Continued from preceding page.

retemaraPlobmySsnoitidnoC

niaGtnerruCCD

emiTegarotSt

emiTllaFt

hEF1VECI,V5=
hEF2

V

EC

I

gts

C

I

f

C

Switching Time Test Circuit

A3.0=

C

I,V5=

A0.2=01

C

I,A5.2=
I,A5.2=

I,A5.0=

1B
1B

2B

I,A5.0=

2B

sgnitaR

nimpytxam

030405

A0.1–=
A0.1–=

tinU

5.2sµ

51.0sµ

I

B1

I

B2

8

6

–A

C

4

R

V

OUT

1.0A

C

V

IC -- V

1.4A

1.2A

0.8A

0.6A

0.4A

CC

CE

1.6A

0.1

I

B1

V

OUT

1.8A

0.9

V

OUT

t

stgtf

2.0A

V

I

B2

OUT

6

5

–A

4

C

3

IC -- V

BE

VCE=5V

0.2A

2

Collector Current, I

0

0

100

7
5

3

FE

2

10

7

DC Current Gain, h

5

3
2

3752375

246810

Collector-to-Emitter Voltage, VCE–V

h

-- I

FE

°C

Ta=120

°C

25

°C

--40

23 75

0.1

Collector Current, IC–A

C

1.0

=0

I

B

IT03884

VCE=5V

IT03886

2

Collector Current, I

1

0

0 0.2 0.4 0.6 0.8 1.0 1.41.2

°C

Ta=120

25

°C

°C

--40

Base-to-Emitter Voltage, VBE–V

7

IC / IB=5

5

3
2

(sat) – V

CE

1.0
7
5

3
2

Collector-to-Emitter

Saturation Voltage, V

0.1

Ta=

120

°C

7
5

3752375

VCE(sat) -- I

°C

--40

°C

25

23 75

0.1

Collector Current, IC–A

1.0

IT03885

C

°C

°C

Ta=120

--40

°C

25

IT03887

No.5287–2/4