Sanyo 2SC5245 Specifications
Ordering number:EN5184A
NPN Epitaxial Planar Silicon Transistor
2SC5245
UHF to S-Band Low-Noise Amplifier,
OSC Applications
Features
·Low noise : NF=0.9dB typ (f=1GHz).
:NF=1.4dB typ (f=1.5GHz).
·High gain : S21e 2=10dB typ (f=1.5GHz).
·High cutoff frequency :Tf=11GHz typ.
·Low-voltage, low-current operation
(VCE=1V, IC=1mA)
:fT=7GHz type.
:S21e 2=5.5dB typ (f=1.5GHz).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2059B
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[2SC5245] |
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0.425 |
0.3 |
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0.15 |
0.2 |
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3 |
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0 to 0.1 |
2.1 |
1.250 |
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0.425 |
1 |
2 |
0.3 |
0.6 |
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0.65 |
0.65 |
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0.9 |
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2.0 |
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1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Collector-to-Base Voltage |
VCBO |
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20 |
V |
Collector-to-Emitter Voltage |
VCEO |
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10 |
V |
Emitter-to-Base Voltage |
VEBO |
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1.5 |
V |
Collector Current |
IC |
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30 |
mA |
Collector Dissipation |
PC |
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150 |
mW |
Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector Cutoff Current |
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ICBO |
VCB=10V, IE=0 |
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1.0 |
µA |
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Emitter Cutoff Current |
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IEBO |
VEB=1V, IC=0 |
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10 |
µA |
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DC Current Gain |
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hFE |
VCE=5V, IC=10mA |
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60* |
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270* |
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Gain-Bandwidth Product |
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fT1 |
VCE=5V, IC=10mA |
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8 |
11 |
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GHz |
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fT2 |
VCE=1V, IC=1mA |
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7 |
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GHz |
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Output Capacitance |
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Cob |
VCB=10V, f=1MHz |
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0.45 |
0.7 |
pF |
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Reverse Transfer Capacitance |
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Cre |
VCB=10V, f=1MHz |
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0.30 |
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pF |
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* : The 2SC5245 is classified by 10mA hFE as follows : |
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Continued on next page. |
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60 |
3 |
120 |
90 |
4 |
180 |
135 |
5 |
270 |
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Marking : MN hFE rank : 3, 4, 5
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20599TH (KT)/D2696TS/90195YK (KOTO) TA-0209 No.5184–1/5
2SC5245
Continued from preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
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typ |
max |
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Forward Transfer Gain |
| S21e |2 1 |
VCE=5V, IC=10mA, f=1.5GHz |
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8 |
10 |
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dB |
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| S21e |2 2 |
VCE=1V, IC=1mA, f=1.5GHz |
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5.5 |
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dB |
Noise Figure |
NF1 |
VCE=5V, IC=5mA, f=1.5GHz |
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1.4 |
3.0 |
dB |
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NF2 |
VCE=2V, IC=3mA, f=1GHz |
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0.9 |
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dB |
No.5184–2/5
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