Sanyo 2SC5238 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition Color Display
Horizontal Deflection Output Applications
Ordering number:EN5126
2SC5238
1.75
2.9
1.2
3.0
26.0
20.7
20.0
5.45
5.45
12
3
5.0
1.0
3.1
2.0
0.6
5.455.45
2.8
Features
· High speed (tf=100ns typ).
· High breakdown voltage (V
CBO
=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2111A
[2SC5238]
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3JML
OBC OEC OBE
Tc=25˚C
0051V 008V 6V 05A 001A
3.5W 061W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
egatloVniatsaSrettimE-ot-rotcelloCV
tnerruCffotuCrettimEI
tnerruCffotuCrotcelloC
niaGtnerruCCD
I
I hEF1VECI,V5= hEF2
V
SEC
OBE OBC
EC
I
)sus(OEC
C
V
BE
V
BC
V
EC
V0051= 0.1Am
I,Am001=
0=008V
B
I,V4=
0=0.1Am
C
I,V008=
0=01Aµ
E
A0.1=
C
I,V5=
A04=47
C
20599HA (KT)/90195YK (KOTO) TA-0415 No.5126–1/4
sgnitaR
nimpytxam
0203
Continued on next page.
tinU
2SC5238
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
I,A04=
)tas(EC
C
I
)tas(EB
C
I
gts
C
I
f
C
A01=
B
I,A04=
A01=5.1V
B
I,A03=
I,A5=
1B
I,A03=
2B
I,A5=
1B
2B
sgnitaR
nimpytxam
A51–= A51–=
1.02.0sµ
tinU
5V
0.2sµ
No.5126–2/4
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