Sanyo 2SC5230 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Ordering number:EN5046
2SC5230
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=10.5dB typ (f=1GHz).
· High cutoff frequency : fT=6.5GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* : The 2SC5230 is classified by 20mA hFE as follows :
hFE rank : D, E, F
Package Dimensions
unit:mm
2004B
[2SC5230]
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioNFNVECI,V5=
OBC OEC OBE
C
C
V
OBC
V
OBE
h
V
EF
V
T
2
V
|e12S|
I,V01=
BC BE EC EC BC BC EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
C
I,V5=
C
I,V5=
C C
021D06081E09072F531
Am02= Am02= zHM1=f,V01= zHM1=f,V01=
zHG1=f,Am02=
zHG1=f,Am7=0.18.1Bd
1 : Base 2 : Emitter 3 : Collector SANYO : NP JEDEC : T O-92 EIAJ : SC-43
02V 01V 2V 07Am 004Wm
sgnitaR
nimpytxam
*06*072
5.45.6zHG
58.03.1Fp
55.0Fp
85.01Bd
˚C ˚C
tinU
20599TH (KT)/31395YK (KOTO) TA-0242 No.5046–1/5
2SC5230
No.5046–2/5
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