
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Ordering number:EN5046
2SC5230
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=10.5dB typ (f=1GHz).
· High cutoff frequency : fT=6.5GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* : The 2SC5230 is classified by 20mA hFE as follows :
hFE rank : D, E, F
Package Dimensions
unit:mm
2004B
[2SC5230]
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioNFNVECI,V5=
OBC
OEC
OBE
C
C
V
OBC
V
OBE
h
V
EF
V
T
2
V
|e12S|
I,V01=
BC
BE
EC
EC
BC
BC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
C
I,V5=
C
I,V5=
C
C
021D06081E09072F531
Am02=
Am02=
zHM1=f,V01=
zHM1=f,V01=
zHG1=f,Am02=
zHG1=f,Am7=0.18.1Bd
1 : Base
2 : Emitter
3 : Collector
SANYO : NP
JEDEC : T O-92
EIAJ : SC-43
02V
01V
2V
07Am
004Wm
sgnitaR
nimpytxam
*06*072
5.45.6zHG
58.03.1Fp
55.0Fp
85.01Bd
˚C
˚C
tinU
20599TH (KT)/31395YK (KOTO) TA-0242 No.5046–1/5