Sanyo 2SC5229 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Ordering number:EN5045
2SC5229
4.5
Features
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=10.5dB typ (f=1GHz).
· High cutoff frequency : fT=6.5GHz typ.
· Medium power operation : NF=1.7dB typ (f=1GHz). (VCE=8V, IC=40mA) : S21e2=11dB typ
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* : The 2SC5229 is classified by 20mA hFE as follows :
Marking : CY hFE rank : D, E, F
Package Dimensions
unit:mm
2038A
[2SC5229]
1.6
(f=1GHz).
2.5
4.25max
0.4
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
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tnerruCffotuCrotcelloCI
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niaGtnerruCCD
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ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
021D06081E09072F531
OBC OEC OBE
C
C
V
OBC
V
OBE
h
V
EF
V
T
I,V01=
BC BE EC EC BC BC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am02=
C
I,V5=
Am02=
C
zHM1=f,V01= zHM1=f,V01=
mm052(draobcimarecnodetnuoM
0.5
3
2
1.5
3.0
0.75
2
× )mm8.0007Wm
1.0
1
nimpytxam
*06*072
5.45.6zHG
1.5
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
02V 01V 2V 07Am
˚C ˚C
sgnitaR
58.03.1Fp
55.0Fp
tinU
Continued on next page.
21599TH (KT)/32795YK (KOTO) TA-0244 No.5045–1/5
Continued from preceding page.
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niaGrefsnarTdrawroF
erugiFesioN
2
V
|e12S|
1
EC
2
V
|e12S|
2 1FNVECI,V5= 2FNVECI,V8=
EC
2SC5229
I,V5=
C
I,V8=
C C C
sgnitaR
nimpytxam zHG1=f,Am02= zHG1=f,Am04=
zHG1=f,Am7=0.18.1Bd
zHG1=f,Am04=7.1Bd
85.01Bd 11Bd
tinU
No.5045–2/5
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