Sanyo 2SC5229 Specifications
Ordering number:EN5045
NPN Epitaxial Planar Silicon Transistor
2SC5229
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Features
·Low noise : NF=1.0dB typ (f=1GHz).
·High gain : S21e 2=10.5dB typ (f=1GHz).
·High cutoff frequency :Tf=6.5GHz typ.
·Medium power operation : NF=1.7dB typ (f=1GHz). (VCE=8V, IC=40mA) : S21e 2=11dB typ
(f=1GHz).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2038A
[2SC5229]
4.5
|
1.6 |
|
1.5 |
|
|
2.5 |
4.25max |
0.4 |
0.5 |
1.0 |
|
3 |
2 |
1 |
0.4 |
1.5 |
|
|
|
|
3.0 |
|
1 : Base |
|
|
|
|
0.75 |
|
|
2 : Collector |
3 : Emitter
SANYO : PCP
(Bottom view)
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
20 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
10 |
V |
Emitter-to-Base Voltage |
VEBO |
|
2 |
V |
Collector Current |
IC |
|
70 |
mA |
Collector Dissipation |
PC |
Mounted on ceramic board (250mm2× 0.8mm) |
700 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
|
|
Parameter |
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|
Symbol |
|
Conditions |
|
Ratings |
|
Unit |
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|
min |
typ |
max |
|
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Collector Cutoff Current |
|
|
ICBO |
VCB=10V, IE=0 |
|
|
|
1.0 |
µA |
|||
Emitter Cutoff Current |
|
|
IEBO |
VEB=1V, IC=0 |
|
|
|
10 |
µA |
|||
DC Current Gain |
|
|
hFE |
VCE=5V, IC=20mA |
|
60* |
|
270* |
|
|||
Gain-Bandwidth Product |
|
|
fT |
VCE=5V, IC=20mA |
|
4.5 |
6.5 |
|
GHz |
|||
Output Capacitance |
|
|
Cob |
VCB=10V, f=1MHz |
|
|
0.85 |
1.3 |
pF |
|||
Reverse Transfer Capacitance |
|
|
Cre |
VCB=10V, f=1MHz |
|
|
0.55 |
|
pF |
|||
* : The 2SC5229 is classified by 20mA hFE as follows : |
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Continued on next page. |
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60 D 120 |
90 E 180 |
135 |
F 270 |
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Marking : CY |
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hFE rank : D, E, F |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/32795YK (KOTO) TA-0244 No.5045–1/5
2SC5229
Continued from preceding page.
Parameter |
Symbol |
Conditions |
|
|
Ratings |
|
Unit |
|
|
|
|
||||
|
|
|
min |
|
typ |
max |
|
|
|
|
|
|
|
|
|
Forward Transfer Gain |
| S21e |2 1 |
VCE=5V, IC=20mA, f=1GHz |
|
8 |
10.5 |
|
dB |
|
| S21e |2 2 |
VCE=8V, IC=40mA, f=1GHz |
|
|
11 |
|
dB |
Noise Figure |
NF1 |
VCE=5V, IC=7mA, f=1GHz |
|
|
1.0 |
1.8 |
dB |
|
NF2 |
VCE=8V, IC=40mA, f=1GHz |
|
|
1.7 |
|
dB |
No.5045–2/5
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