Sanyo 2SC5226 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Ordering number:EN5032A
2SC5226
0.3
Features
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=12dB typ (f=1GHz).
· High cutoff frequency : fT=7GHz typ.
Package Dimensions
unit:mm
2059B
[2SC5226]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioNFNVECI,V5=
* : The 2SC5226 is classified by 20mA hFE as follows :
C
C
h
EF
T
0.425
2.1
1.250
0.425
3
12
0.65
0.65
2.0
0.15
0.3 0.6
0.9
0.2
0 to 0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
OBC
OEC
OBE
nimpytxam
V
OBC
V
OBE
V
V
2
V
|e12S|
)1(
2
V
)2(
|e12S|
I,V01=
BC
BE
EC
EC
BC
BC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
C
I,V5=
C
I,V5=
C
I,V2=
C
C
0213060814090725531
Am02=
Am02=
zHM1=f,V01=
zHM1=f,V01=
zHG1=f,Am02=
zHG1=f,Am3=
zHG1=f,Am7=0.18.1Bd
*06*072
57 zHG
921Bd
Marking : LN
hFE rank : 3, 4, 5
02V
01V
2V
07Am
051Wm
sgnitaR
57.02.1Fp
5.0Fp
8Bd
˚C
˚C
tinU
22299TS (KOTO) TA-0079 No.5032–1/5
2SC5226
FE
DC Current Gain,h
Output Capacitance, Cob – pFNoise Figure, NF – dB
Collector Current, IC –mA
– GHz
T
Gain Bandwidth Product, f
Collector Current, IC –mA
Reverse Transfer Capacitance, Cre – pFForward Transfer Gain, S21e
–mW
C
Collector-to-Base Voltage, VCB – V Collector-to-Base Voltage, VCB –V
–dB
2
Collector Current, IC –mA
Collector Current, IC –mA
Collector Dissipation, P
Ambient Temperature, Ta – °C
No.5032–2/5
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