Sanyo 2SC5226 Specifications

Ordering number:EN5032A

NPN Epitaxial Planar Silicon Transistor

2SC5226

VHF to UHF Wide-Band Low-Noise

Amplifier Applications

Features

·Low noise : NF=1.0dB typ (f=1GHz).

·High gain : S21e 2=12dB typ (f=1GHz).

·High cutoff frequency :Tf=7GHz typ.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2059B

		[2SC5226]
	0.425	0.3
		0.15	0.2
		3
			0 to 0.1
2.1	1.250

	0.425	1	2	0.3	0.6
		0.65	0.65
					0.9
		2.0

1 : Base

2 : Emitter

3 : Collector

SANYO : MCP

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		20	V
Collector-to-Emitter Voltage	VCEO		10	V
Emitter-to-Base Voltage	VEBO		2	V
Collector Current	IC		70	mA
Collector Dissipation	PC		150	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol			Conditions				Ratings		Unit
							min	typ	max
Collector Cutoff Current	ICBO		VCB=10V, IE=0						1.0	µA
Emitter Cutoff Current	IEBO		VEB=1V, IC=0						10	µA
DC Current Gain	hFE		VCE=5V, IC=20mA				60*		270*
Gain-Bandwidth Product	fT		VCE=5V, IC=20mA				5	7		GHz
Output Capacitance	Cob		VCB=10V, f=1MHz					0.75	1.2	pF
Reverse Transfer Capacitance	Cre		VCB=10V, f=1MHz					0.5		pF
Forward Transfer Gain	| S21e |2(1)		VCE=5V, IC=20mA, f=1GHz				9	12		dB
	| S21e |2(2)		VCE=2V, IC=3mA, f=1GHz					8		dB
Noise Figure	NF		VCE=5V, IC=7mA, f=1GHz					1.0	1.8	dB
* : The 2SC5226 is classified by 20mA hFE as follows :						Marking : LN
		60	3 120	90 4 180	135 5 270
						hFE rank : 3, 4, 5

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22299TS (KOTO) TA-0079 No.5032–1/5

				2SC5226
				GHz
FE				–
				T
DC Current Gain,h				Bandwidth Product, f
				Gain
Collector Current, IC	– mA			Collector Current, IC	–	mA
				pF
pF				–
–				Cre
Output Capacitance, Cob				Reverse Transfer Capacitance,
Collector-to-Base Voltage, VCB			– V	Collector-to-Base Voltage, VCB – V
				dB
				–
– dB				S21e 2
Noise Figure, NF				Forward Transfer Gain,
Collector Current, IC	–	mA		Collector Current, IC	–	mA
mW
–
C
Collector Dissipation, P
Ambient Temperature, Ta		–	°C

No.5032–2/5