Sanyo 2SC5155 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Low-Frequency
General-Purpose Amplifier, Applications
Ordering number:EN4802
2SC5155
2.3
2.3
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
Applications
· Various drivers.
Features
· High current capacity.
· Adoption of MBIT process.
· High DC current gain.
· Low collector-to-emitter saturation voltage.
· High V
EBO
.
Package Dimensions
unit:mm
2045B
[2SC5155]
unit:mm
2044B
[2SC5155]
6.5
5.0
1.55.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
0.5
0.85
1243
0.6
2.3 2.3
0.8
20599HA (KT)/93094TS (KOTO) BX-0950 No.4802–1/4
7.0
2.5
0.5
1.2
0~0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2SC5155
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
OBC
OEC
OBE
C
PC
B
C
Tc=25˚C
V
OBC
OBE
hEF1VECI,V2=
hEF2VECI,V2=
T
no
gts
f
BC
V
BE
V
EC
BC
I
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V03=
0=001An
E
I,V01=
0=001An
C
Am005=
C
A2=
C
I,V2=
Am005=
C
zHM1=f,V01=
I,A2=
Am02=
B
I,A2=
Am02=
B
I,Aµ01=
0=05V
E
R,Am1=
=∞ 02V
EB
I,Aµ01=
0=51V
C
tiucriCtseTdeificepseeS41.0sµ
tiucriCtseTdeificepseeS5.1sµ
tiucriCtseTdeificepseeS21.0sµ
sgnitaR
nimpytxam
00800510023
005
062zHM
53Fp
51.05.0V
58.02.1V
05V
02V
51V
3A
6A
6.0A
1W
02W
˚C
˚C
tinU
Switching Time Test Circuit
No.4802–2/4
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