Sanyo 2SC5070 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose Amplifier,
Driver Applications
Ordering number:EN4473
2SC5070
Features
· High current capacity.
· Adoption of MBIT process.
· High DC current gain.
· Low collector-to-emitter saturation voltage.
· High V
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2084A
[2SC5070]
.
EBO
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
B
C
10.5
0.5
123
2.5 2.5
8.5
1.0
1.2
7.5
1.6
4.5
1.9
2.6
1.2
1.4
0.5
1 : Emitter 2 : Collector 3 : Base SANYO : FLP
03V 52V 51V 2A 4A
4.0A
5.1W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
hEF1VECI,V5= hEF2VECI,V5=
V
OBC
V
OBE
V
T
I,V02=
BC BE
EC BC
0=001An
E
I,V01=
0=001An
C
Am005=
C
A1=
C
I,V01=
Am05=
C
zHM1=f,V01=
12599HA (KT)/52094MT (KOTO) BX-0116 No.4473–1/4
nimpytxam
00800510023 006
sgnitaR
062zHM 72Fp
tinU
2SC5070
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegartSt
emiTllaFt
I
I,A1=
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E no gts
f
Am02=
B
I,A1=
Am02=
B
I,Aµ01=
0=03V
E
R,Am1=
= 52V
EB
I,Aµ01=
0=51V
C
tiucriCtseTdeificepseeS41.0sµ tiucriCtseTdeificepseeS53.1sµ tiucriCtseTdeificepseeS1.0sµ
Switching Time Test Circuit
sgnitaR
nimpytxam
51.05.0V
58.02.1V
tinU
No.4473–2/4
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