Sanyo 2SC4987 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
High-Speed Switching Applications
Ordering number:EN4723
2SC4987
0.75
Features
· Fast switching speed.
· Low collector saturation voltage.
· High gain-bandwidth product.
· Small collector capacitance.
· Very small-sized package permitting 2SC4987­applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
Package Dimensions
unit:mm
2106A
[2SC4987]
0.3
0.4
0.8
1.6
0.4
0.2
0.5
0.5
1.6
OBC SEC OEC OBE
0.6
0 to 0.1
0.1
0.1max
1 : Base 2 : Emitter 3 : Collector SANYO : SMCP
04V 04V 51V 5V 002Am 005Am 04Am 051Wm
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
* : The 2SC4987 is classified by 10mA hFE as follows :
h
V
OBC
V
OBE
V
EF
V
T
h
I,V02=
BC BE EC EC BC
EF
0=1.0Aµ
E
I,V3=
0=1.0Aµ
C
I,V1=
Am01=
C
I,V01=
Am01=
C
zHM1=f,V5=
gnikraM4B5B6B
001ot05041ot07002ot001
12599HA (KT)/53094MT (KOTO) A8-9561 No.4723–1/4
nimpytxam
054057zHM
sgnitaR
*0509*002
4.10.4Fp
tinU
2SC4987
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E no gts
f
I,Am01=
Am1=
B
I,Am01=
Am1=08.058.0V
B
I,Aµ01=
0=04V
E
R,Am1=
= 51V
EB
I,Aµ01=
0=5V
C
.tiucrictsetdeificepseeS .tiucrictsetdeificepseeS .tiucrictsetdeificepseeS
sgnitaR
nimpytxam
31.052.0V
0.8sn
0.6sn 21sn
tinU
No.4723–2/4
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