Sanyo 2SC4987 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Speed Switching Applications
Ordering number:EN4723
2SC4987
0.75
Features
· Fast switching speed.
· Low collector saturation voltage.
· High gain-bandwidth product.
· Small collector capacitance.
· Very small-sized package permitting 2SC4987applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
Package Dimensions
unit:mm
2106A
[2SC4987]
0.3
0.4
0.8
1.6
0.4
0.2
0.5
0.5
1.6
OBC
SEC
OEC
OBE
0.6
0 to 0.1
0.1
0.1max
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
04V
04V
51V
5V
002Am
005Am
04Am
051Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
* : The 2SC4987 is classified by 10mA hFE as follows :
h
V
OBC
V
OBE
V
EF
V
T
h
I,V02=
BC
BE
EC
EC
BC
EF
0=1.0Aµ
E
I,V3=
0=1.0Aµ
C
I,V1=
Am01=
C
I,V01=
Am01=
C
zHM1=f,V5=
gnikraM4B5B6B
001ot05041ot07002ot001
12599HA (KT)/53094MT (KOTO) A8-9561 No.4723–1/4
nimpytxam
054057zHM
sgnitaR
*0509*002
4.10.4Fp
tinU
2SC4987
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,Am01=
Am1=
B
I,Am01=
Am1=08.058.0V
B
I,Aµ01=
0=04V
E
R,Am1=
=∞ 51V
EB
I,Aµ01=
0=5V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
sgnitaR
nimpytxam
31.052.0V
0.8sn
0.6sn
21sn
tinU
No.4723–2/4
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