Sanyo 2SC4983 Specifications

Ordering number:4661

PNP/NPN Epitaxial Planar Silicon Transistor

2SA1881/2SC4983

Low-Frequency

General-Purpose Amplifier Applications

Features

· AF power amplifier, medium-speed switching, smallsized motor drivers and LED drivers.

Features

·Large current capacity.

·Low collector-to-emitter saturation voltage.

·Very small-sized pakage permitting 2SA1881/ 2SC4983-appied set to be made smaller and slimmer.

( ) : 2SA1881

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2018B

[2SA1881/2SC4983]

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(–)15	V
Collector-to-Emitter Voltage	VCEO		(–)15	V
Emitter-to-Base Voltage	VEBO		(–)5	V
Collector Current	IC		(–)1	A
Collector Current (Pulse)	ICP		(–)3	A
Base Current	IB		(–)200	mA
Collector Dissipation	PC		250	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=(–)12V, IE=0			(–)100	nA
Emitter Cutoff Current	IEBO	VEB=(–)4V, IC=0			(–)100	nA
DC Current Gain	hFE1	VCE=(–)2V, IC=(–)50mA	135*		600*
	hFE2	VCE=(–)2V, IC=(–)800mA	80
Gain-Bandwidth Product	fT	VCE=(–)2V, IC=(–)50mA		(300)		MHz
				200		MHz
Output Capacitance	Cob	VCB=(–)10V, f=1MHz		(15)10		pF

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91098HA (KT)/51694TH (KOTO) A8-9412 No.4661–1/4

2SA1881/2SC4983

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector-to-Emitter Saturation Voltage	VCE(sat)1	IC=(–)5mA, IB=(–)0.5mA		(–)10	(–)25	mV
	VCE(sat)2	IC=(–)500mA, IB=(–)25mA		(–)120	(–)240	mV
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=(–)500mA, IB=(–)25mA		(–)0.9	(–)1.2	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0	(–)15			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=–1mA, RBE=∞	(–)15			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=–10µA, IC=0	(–)5			V

* : The 2SA1881/2SC4983 are classified by 50mA hFE as follows :

135	5	270	200	6	400	300	7	600

Marking : 2SA1881 : IS

2SC4983 : KN

No.4661–2/4