SANYO 2SC4976, 2SA1875 Datasheet
Ordering number : ENN5507B
2SA1875 / 2SC4976
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1875 / 2SC4976
High-Definition CRT Display
Video Output Applications
Features
•
High fT : fT=400MHz(typ).
•
High breakdown voltage : V
•
Large current capacitance.
• Small reverse transfer capacitance and excellent high
-frequency characteristic :
Cre=3.4pF(NPN), 4.2pF(PNP).
• Adoption of FBET process.
≥200V(min).
CEO
Package Dimensions
unit : mm
2045B
[2SA1875 / 2SC4976]
6.5
unit : mm
2044B
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
[2SA1875 / 2SC4976]
6.5
5.0
4
1.5
5.5
0.8
1.55.5
1.6
7.0
7.5
2.3
2.3
0.5
0.5
0.5
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
3
0.8
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-9766
No.5507-1/5
2SA1875 / 2SC4976
Specifications
( ) : 2SA1875
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
Tc=25°C12W
Electrical Characteristics at Ta=25°C
(--)200 V
(--)200 V
(--)3 V
(--)300 mA
(--)600 mA
(--)30 mA
0.8 W
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)30V, f=1MHz (5.0)4.2 pF
Reverse Transfer Capacitance Cre VCB=(--)30V, f=1MHz (4.2)3.4 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)50mA, IB=(--)5mA
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)50mA, IB=(--)5mA
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
* : The 2SA1875 / 2SC4976 are classified by 50mA hFE as follows
Rank D E F
h
60 to 120 100 to 200 160 to 320
FE
CBO
EBO
hFE1VCE=(--)10V, IC=(--)50mA 60* 320*
hFE2VCE=(--)10V, IC=(--)250mA 20
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
VCB=(--)150V, IE=0 (--)0.1 µA
VEB=(--)2V, IC=0 (--)1.0 µA
VCE=(--)10V, IC=(--)100mA 400 MHz
T
=(--)10µA, IE=0 (--)200 V
=(--)1mA, RBE=∞ (--)200 V
=(--)100µA, IC=0 (--)3 V
Ratings
min typ max
(--)1.0
(--)1.0
Unit
V
V
IC -- V
--350
--300
--250
-- mA
C
--200
--150
--100
Collector Current, I
--50
0
0 --0.2 --0.4 --0.6 --1.0--0.8 --1.2
BE
C
°
Ta=75
2SA1875
VCE= --10V
C
C
°
°
25
--25
Base-to-Emitter V oltage, VBE -- V
IT03431
IC -- V
BE
C
°
Ta=75
C
C
°
°
25
--25
-- mA
C
350
300
250
200
150
100
Collector Current, I
50
0
0 0.2 0.4 0.6 1.00.8 1.2
Base-to-Emitter V oltage, VBE -- V
2SC4976
VCE=10V
IT03432
No.5507-2/5
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