Sanyo 2SC4922 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Muting Circuit, Driver Applications
Ordering number:EN4768
2SC4922
0.75
Features
· High DC current gain.
· On-chip bias resistance (R1=47kΩ, R2=47kΩ).
· Very small-sized package permitting 2SC4922applied sets to be made smaller and slimmer.
· Small ON resistance.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
egatloVtupnIV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
NI
C
PC
B
C
Package Dimensions
unit:mm
2106A
[2SC4922]
0.3
0.4
0.8
0.4
0.2
0.5
0.5
1.6
0.6
0 to 0.1
1.6
0.1
0.1max
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
52V
02V
01V
81V
001Am
002Am
02Am
051Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO*boCV
I
OBC
I
OEC
OBE
h
EF
*VECI,V5=
T
V
V
V
V
I,V02=
BC
EC
BE
EC
BC
0=1.0Aµ
E
I,V51=
0=5.0Aµ
B
I,V5=
0=033508Aµ
C
I,V2=
Am5=
C
Am01=
C
zHM1=f,V01=
* Characteristic of the constituent transistor.
Marking : GA
12599HA (KT)/53094TH (KOTO) AX8876 No.4768–1/3
nimpytxam
002
sgnitaR
042zHM
4.1Fp
tinU
2SC4922
retemaraPlobmySsnoitidnoC
egatloVetatS-FFOtupnIV
egatloVetatS-NOtupnIV
ecnatsiseRtupnI1R
oitaRecnatsiseR2R/1R
ecnatsiseRNOnoRV
Electrical Connection
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
I
I,Am2=
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
V
)ffo(I
EC
V
)no(I
EC
NI
Am2.0=
B
I,Aµ01=
0=52V
E
R,Am1=
=∞ 02V
EB
I,V2=
Aµ001=7.00.14.1V
C
I,V3.0=
Am5=0.15.10.3V
C
zHM1=f,V01=
sgnitaR
nimpytxam
0103Vm
237426
9.00.11.1
0.4
tinU
kΩ
Ω
No.4768–2/3
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