Sanyo 2SC4919 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
Muting Circuit Applications
Ordering number:EN4765
2SC4919
0.75
Features
· Very small-sized package permitting 2SC4919­applied sets to be made smaller and slimmer.
· Small output capacitance.
· Low collector-to-emitter saturation voltage.
· Small ON resistance.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
Package Dimensions
unit:mm
2106A
[2SC4909]
0.3
0.5
0.5
1.6
OBC OEC OBE
0.6
0.4
0 to 0.1
0.8
1.6
0.4
0.2
0.1
0.1max
1 : Base 2 : Emitter 3 : Collector SANYO : SMCP
52V 51V 5V 001Am 002Am 02Am 051Wm
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
I
h
V
OBC
V
OBE
V
EF
V
T
I,V51=
BC BE EC EC BC
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V2=
Am5=
C
I,V5=
Am01=
C
zHM1=f,V01=
Marking : DA
12599HA (KT)/53094TH (KOTO) BX-8875 No.4765–1/3
nimpytxam
0080023
sgnitaR
042zHM
4.1Fp
tinU
2SC4919
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
ecnatsiseRNOnoRI
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E B
sgnitaR
nimpytxam
I,Am01=
Am1=
B
I,Am01=
Am1=
B
I,Aµ01=
0=52V
E
R,Am1=
= 51V
EB
I,Aµ01=
0=5V
C
zHM1=f,Am3=
4103Vm
47.01.1V
9.0
tinU
No.4765–2/3
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