Sanyo 2SC4890 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:EN4137
2SC4890
16.0
21.0
Features
· High speed (tf=100ns typ).
· High reliability (Adoption of HVP process).
· High breakdown voltage (V
CBO
=1500V).
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2039D
[2SC4890]
3.4
5.0
4.0
12
5.45
OBC
OEC
OBE
Tc=25˚C
2.8
2.0
1.0
3
3.5
5.45
5.6
3.1
8.0
22.0
2.0
2.0
20.4
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
0051V
008V
6V
21A
03A
0.3W
57W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
egatloVniatsaSrettimE-ot-rotcelloCV
tnerruCffotuCrettimEI
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
I
I
V
SEC
OBC
OBE
EC
V
BC
I
)sus(OEC
C
V
BE
I
)tas(EC
C
I
)tas(EB
C
R,V0051=
0=0.1Am
EB
I,V008=
0=01Aµ
E
I,Am001=
0=008V
B
I,V4=
0=0.1Am
C
I,A01=
A5.2=
B
I,A01=
A5.2=5.1V
B
12599HA (KT)/5132MH (KOTO) No.4137–1/4
sgnitaR
nimpytxam
tinU
5V
2SC4890
retemaraPlobmySsnoitidnoC
niaGtnerruCCD
emiTegarotSt
emiTllaFt
hEF1VECI,V5=
hEF2VECI,V5=
I
gts
C
I
f
C
A0.1=
C
A01=
C
I,A8=
I,A8=
I,A6.1=
1B
1B
2B
I,A6.1=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
803
48
A2.3–=
A2.3–=
tinU
0.3sµ
2.0sµ
No.4137–2/4
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