Sanyo 2SC4871 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band Low-Noise Amplifier,
OSC Applications
Ordering number:EN4857
2SC4871
0.3
Features
· High cutoff frequency : fT=10GHz typ.
· High gain : S21e2=13dB typ (f=1GHz).
· Low noise : NF=1.3dB typ (f=1GHz).
· Small Cob : Cob=0.4pF typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2059B
[2SC4871]
0.425
2.1
1.250
0.425
OBC
OEC
OBE
3
12
0.65
0.65
2.0
0.15
0.3 0.6
0.9
0.2
0 to 0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
61V
8V
5.1V
02Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
* : The 2SC4871 is classified by 4mA hFE as follows :
Marking : HN
h
V
OBC
V
OBE
V
EF
V
T
V
boC
2
V
|e12S|
FNVECI,V5=
I,V01=
BC
BE
EC
EC
BC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am4=
C
I,V5=
Am4=
C
zHM1=f,V01=
I,V5=
C
C
0213060814090725531
zHG1=f,Am7=
zHG1=f,Am4=3.18.2Bd
hFE rank : 3, 4, 5
12599HA (KT)/41095TS (KOTO) TA-0078 No.4857–1/4
nimpytxam
0131Bd
sgnitaR
*06*072
01zHG
4.07.0Fp
tinU
2SC4871
No.4857–2/4
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