SANYO 2SC4865 Technical data
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band
Low-Noise Amplifier Applications
Ordering number:EN4760
2SC4865
1.9
Features
· Low noise : NF=1.1dB typ (f=1GHz).
· High gain : S21e2=12.5dB typ (f=1GHz).
· High cutoff frequency : fT=7.0GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2110A
[2SC4865]
0.95
0.95
0.4
43
2
1
0.95
0.85
2.9
OBC
OEC
OBE
0.5
2.5
1.5
0.6
0.5
0.16
0 to 0.1
1 : Emitter
2 : Collector
3 : Emitter
0.8
1.1
4 : Base
SANYO : CP4
61V
8V
2V
07Am
002Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
* : The 2SC4865 is classified by 20mA hFE as follows :
Marking : FN
h
V
OBC
V
OBE
V
EF
V
T
V
boC
2
V
|e12S|
FNVECI,V5=
I,V01=
BC
BE
EC
EC
BC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am02=
C
I,V5=
Am02=
C
zHM1=f,V01=
I,V5=
C
C
0213060814090725531
zHG1=f,Am02=
zHG1=f,Am7=1.10.2Bd
hFE rank : 3, 4, 5
12099HA (KT)/90794MT (KOTO) AX-9525 No.4760–1/4
nimpytxam
5.85.21Bd
sgnitaR
*06*072
0.7zHG
59.04.1Fp
tinU
2SC4865
No.4760–2/4
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