Ordering number : ENN5495A
2SA1852 / 2SC4826
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1852 / 2SC4826
High Definition CRT Display
Video Output Applications
Applications
•
High definition CRT display video output,
wide-band amplifer.
Features
• Adoption of FBET process.
•
High fT : fT=300MHz(typ).
•
High breakdown voltage : V
• Small reverse transfer capacitance and excellent high
CEO
=200V.
-frequency characteristic :
Cre=1.5pF / NPN, 1.8pF / PNP.
• Shipped in reel tape container to facilitate antomatic
mounting.
Specifications
( ) : 2SA1852
Package Dimensions
unit : mm
2084B
[2SA1852 / 2SC4826]
10.5
1.2
0.5
123
2.5 2.5
1.6
1.0
1.9
8.5
7.5
4.5
2.6
1.2
1.4
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
(--)200 V
(--)200 V
(--)3 V
(--)100 mA
(--)200 mA
(--)20 mA
1.3 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=(--)150V, IE=0 (--)0.1 µA
VEB=(--)2V, IC=0 (--)1.0 µA
Continued on next page.
60801 TS IM AX-9367
Unit
No.5495-1/4
2SA1852 / 2SC4826
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)30V, f=1MHz (2.4)1.9 pF
Reverse Transfer Capacitance Cre VCB=(--)30V, f=1MHz (1.8)1.5 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)20mA, IB=(--)2mA (--)1.0 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)20mA, IB=(--)2mA (--)1.0 V
* : The 2SA1852 / 2SC4826 are classified by 10mA hFE as follows :
Rank D E F
h
60 to 120 100 to 200 160 to 320
FE
hFE1VCE=(--)10V, IC=(--)10mA 60* 320*
hFE2VCE=(--)10V, IC=(--)50mA 20
VCE=(--)30V, IC=(--)30mA 300 MHz
T
Ratings
min typ max
Unit
IC -- V
--50
2SA1852
CE
--500µA
--40
-- mA
C
--30
--20
Collector Current, I
--10
0
0 --4 --8 --16--12 --20
Collector-to-Emitter Voltage, VCE -- V
IC -- V
--120
BE
2SA1852
VCE= --10V
--100
--80
-- mA
C
--60
--450µA
--400µA
--350µA
--300µA
--250µA
--200µA
--150µA
--100µA
--50µA
IB=0
ITR03939
50
2SC4826
40
-- mA
C
30
20
Collector Current, I
10
0
0
Collector-to-Emitter Voltage, VCE -- V
120
100
80
-- mA
C
60
IC -- V
CE
500µA
450µA
400µA
350µA
300µA
250µA
200µA
150µA
100µA
50µA
IB=0
48 1612 20
ITR03940
IC -- V
BE
2SC4826
VCE=10V
--40
Collector Current, I
--20
0
0 --1.2--1.0--0.8--0.6--0.4--0.2
3
2
100
FE
7
5
3
2
DC Current Gain, h
10
7
5
--1.0
Base-to-Emitter V oltage, VBE -- V
hFE -- I
23557
Collector Current, IC -- mA
C
72 235
--10
ITR03941
2SA1852
VCE= --10V
7
--100
ITR03943
40
Collector Current, I
20
0
0 1.21.00.80.60.40.2
3
2
100
FE
7
5
3
2
DC Current Gain, h
10
7
5
1.0
Base-to-Emitter V oltage, VBE -- V
hFE -- I
23 557
C
72 235
10
Collector Current, IC -- mA
ITR03942
2SC4826
VCE=10V
7
100
ITR03944
No.5495-2/4