Sanyo 2SC4737 Specifications

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
NPN Epitaxial Planar Silicon Transistor
50V/2A Driver Applications
Ordering number:ENN3880A
2SC4737
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers).
Features
· High DC current gain.
· Wide ASO.
· On-chip Zener diode of 60 ±10V between collector and base.
· Uniformity in collector-to-base breakdown voltage.
· High inductive load handling capability.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
C
Package Dimensions
unit:mm
2084B
[2SC4737]
1.9
8.5
1.0
7.5
With a low-voltage diode (60±10V) With a low-voltage diode (60±10V)
10.5
0.5
123
2.5 2.5
1.2
1.6
4.5
1.2
0.5
2.6
1.4
1 : Emitter 2 : Collector 3 : Base SANYO : FLP
05V 05V 6V 2A 4A
5.1W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV egatloVnoitarutaSrettimE-ot-esaBV ytilibapaCgnildnaHdaoLevitcudnIb/sER,Hm001=L
h
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I,V04=
BC BE EC EC
0=01Aµ
E
I,V5=
0=2Am
C
I,V5=
A1=
C
I,V5=
A1=
C
I,A1=
Am4=
B
I,A1=
Am4=0.2V
B
001= 52Jm
EB
D2000TS TA-2964/12099HA (KT)/D051MH, (KOTO) No.3880–1/4
sgnitaR
nimpytxam
00010004
081zHM
0.15.1V
Continued on next page.
tinU
Page 2
2SC4737
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV emiTno-nruTt emiTegarotSt
emiTllaFt
Switching Time Test Circuit Es/b T est Circuit
OUTPUT
PW=50µs, D.C.≤1% IB1= --IB2=4mA
INPUT
50
R
B
V
R
+
100µF 470µF
TUT
+
f
R 20
I
OBC)RB(
C
I
OEC)RB(
C no gts
L
I,Aµ001=
0=050607V
E
R,Am1=
= 050607V
EB
.tiucriCtseTdeificepseeS2.0sµ .tiucriCtseTdeificepseeS5.3sµ .tiucriCtseTdeificepseeS5.0sµ
VCC=20V, RBE=100
SW
I
B
R
BE
10kΩ300
TUT
sgnitaR
nimpytxam
L
+V
CC
tinU
°C
--40
CE
C
°C
VCC=20V
µA
1000
400µA
300µA
1.0
250µA
200µA
150µA
I
B
VCE=5V
350µA
=0
ITR07514
323 5
ITR07516
VBB= --5V
IC=250 IB1= --250 IB2=1A
µA
2000
IC -- V
µA
1500
2.0
1.6
–A
C
1.2
500
0.8
Collector Current, I
0.4
0
012345
450µA
µA
Collector-to-Emitter Voltage, VCE–V
hFE -- I
°C
Ta=120
25
Collector Current, IC–A
10000
FE
1000
DC Current Gain, h
100
3 2
7 5
3 2
7 5
3 2
7 5
0.1
2.4
2.0
–A
1.6
C
1.2
0.8
IC -- V
Ta=120
BE
VCE=5V
°C
25
°C
°C
--40
Collector Current, I
0.4
0
0 0.4 1.20.8 1.6 2.0 2.4 2.8
1000
7 5
3 2
100
7 5
3
Output Capacitance, Cob – pF
2
57357 2
10
0.1 1.0
Base-to-Emitter Voltage, VBE–V
Cob -- V
Collector-to-Base Voltage, VCB-- V
CB
223 3 5 23557
7
10
ITR07515
f=
1MHz
ITR07517
No.3880–2/4
Page 3
2SC4737
10
7
5
(sat) – V
3
CE
2
1.0
°C
25
7
5
Collector-to-Emitter
Saturation Voltage, V
3
10
7 5
–A
3
C
2
1.0 7 5
Collector Current, I
3
2
1.6
1.5
1.4
0.1
23 57
VCE(sat) -- I
°C
40
--
Ta=
°C
120
1.0
Collector Current, IC–A
IC -- L
25mJ
23 35723 57
10
L mH
P
-- Ta
C
C
IC / IB=250 IC / IB=250
23 5
ITR07518
RBE=100
°C
Tc=25
2
100
ITR07520
10
7 5
3
(sat) – V
2
BE
1.0
7
5
Base-to-Emitter
Saturation Voltage, V
3
0.1
10
7
ICP=4A
5 3
IC=2A
2
–A
1.0
C
7 5
3 2
0.1 7 5
Collector Current, I
3
Ta=25°C
2
Single pulse
0.01 57
1.0
Collector-to-Emitter Voltage, VCE–V
VBE(sat) -- I
°C
40
--
Ta=
°C
25
°C
120
23 7 53
5
Collector Current, IC–A
C
1.0
A S O
1ms
10ms
100ms
DC operation
2
55
3
7
2
10
2
ITR07519
3
7
100
ITR07521
1.2
–W
C
1.0
0.8
0.6
0.4
Collector Dissipation, P
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Tc – ˚C
ITR07522
No.3880–3/4
Page 4
2SC4737
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice.
PS No.3880–4/4
Loading...