Sanyo 2SC4737 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
50V/2A Driver Applications
Ordering number:ENN3880A
2SC4737
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Features
· High DC current gain.
· Wide ASO.
· On-chip Zener diode of 60 ±10V between collector
and base.
· Uniformity in collector-to-base breakdown voltage.
· High inductive load handling capability.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2084B
[2SC4737]
1.9
8.5
1.0
7.5
With a low-voltage diode (60±10V)
With a low-voltage diode (60±10V)
10.5
0.5
123
2.5 2.5
1.2
1.6
4.5
1.2
0.5
2.6
1.4
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
05V
05V
6V
2A
4A
5.1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
ytilibapaCgnildnaHdaoLevitcudnIb/sER,Hm001=L
h
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I,V04=
BC
BE
EC
EC
0=01Aµ
E
I,V5=
0=2Am
C
I,V5=
A1=
C
I,V5=
A1=
C
I,A1=
Am4=
B
I,A1=
Am4=0.2V
B
001= Ω 52Jm
EB
D2000TS TA-2964/12099HA (KT)/D051MH, (KOTO) No.3880–1/4
sgnitaR
nimpytxam
00010004
081zHM
0.15.1V
Continued on next page.
tinU
2SC4737
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
emiTno-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit Es/b T est Circuit
OUTPUT
PW=50µs, D.C.≤1%
IB1= --IB2=4mA
INPUT
50Ω
R
B
V
R
+
100µF 470µF
TUT
+
f
R
20Ω
I
OBC)RB(
C
I
OEC)RB(
C
no
gts
L
I,Aµ001=
0=050607V
E
R,Am1=
=∞ 050607V
EB
.tiucriCtseTdeificepseeS2.0sµ
.tiucriCtseTdeificepseeS5.3sµ
.tiucriCtseTdeificepseeS5.0sµ
VCC=20V, RBE=100Ω
SW
I
B
R
BE
10kΩ300
TUT
Ω
sgnitaR
nimpytxam
L
+V
CC
tinU
°C
--40
CE
C
°C
VCC=20V
µA
1000
400µA
300µA
1.0
250µA
200µA
150µA
I
B
VCE=5V
350µA
=0
ITR07514
323 5
ITR07516
VBB= --5V
IC=250 IB1= --250 IB2=1A
µA
2000
IC -- V
µA
1500
2.0
1.6
–A
C
1.2
500
0.8
Collector Current, I
0.4
0
012345
450µA
µA
Collector-to-Emitter Voltage, VCE–V
hFE -- I
°C
Ta=120
25
Collector Current, IC–A
10000
FE
1000
DC Current Gain, h
100
3
2
7
5
3
2
7
5
3
2
7
5
0.1
2.4
2.0
–A
1.6
C
1.2
0.8
IC -- V
Ta=120
BE
VCE=5V
°C
25
°C
°C
--40
Collector Current, I
0.4
0
0 0.4 1.20.8 1.6 2.0 2.4 2.8
1000
7
5
3
2
100
7
5
3
Output Capacitance, Cob – pF
2
57357 2
10
0.1 1.0
Base-to-Emitter Voltage, VBE–V
Cob -- V
Collector-to-Base Voltage, VCB-- V
CB
223 3 5 23557
7
10
ITR07515
f=
1MHz
ITR07517
No.3880–2/4
Loading...