Sanyo 2SC4736 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN3975
2SC4736
4.5
Features
· Large current (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(V
· High emitter-to-base voltage (V
· Large power type such as PC=1.5W when used
without heatsink.
· It is possible to make appliances more compact
because its height on board is 9.5mm.
· Effective in automatic inserting and counting stocked
amount because of being provided for radial taping.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
≤0.5V).
CE(sat)
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
EBO
≥15V).
OBC
OEC
OBE
C
PC
B
C
Package Dimensions
unit:mm
2084B
[2SC4736]
10.5
1.2
0.5
123
2.5 2.5
1.6
1.9
8.5
1.0
7.5
2.6
1.2
1.4
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
08V
06V
51V
2A
4A
004Am
5.1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
hEF1VECI,V5=
hEF2VECI,V5=
V
OBC
V
OBE
V
T
V
bo
I
)tas(EC
C
I
C
)tas(EB
I,V05=
BC
BE
EC
BC
0=1Aµ
E
I,V01=
0=1Aµ
C
Am005=
C
A1=
C
I,V01=
Am05=
C
zHM1=f,V01=
I,A1=
Am02=
B
I,A1=
Am02=
B
12099HA (KT)/5132MH (KOTO) No.3975–1/4
nimpytxam
00800510023
006
sgnitaR
071zHM
42Fp
2.05.0V
78.02.1V
tinU
2SC4736
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegartSt
emiTllaFt
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
gts
f
I,Aµ01=
C
C
C
0=08V
E
R,Am1=
=∞ 06V
EB
I,Aµ01=
0=51V
C
Switching Time Test Circuit
sgnitaR
nimpytxam
.tiucriCtseTdeificepseeS32.0sµ
.tiucriCtseTdeificepseeS7.2sµ
.tiucriCtseTdeificepseeS57.0sµ
tinU
No.3975–2/4
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