Sanyo 2SC4710LS Specifications

Ordering number : ENN3688B

2SC4710LS

NPN Triple Diffused Planar Silicon Transistor

2SC4710LS

2100V / 10mA High-Voltage Amplifier,

High-Voltage Switching Applications

Features

•

High breakdown voltage(V

•

Small Cob(typical Cob=1.3pF).

•

Wide ASO.

•

High reliability(Adoption of HVP process).

•

Full isolation package.

min=2100V).

CEO

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Package Dimensions

unit : mm

2079D

[2SC4710LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

2100 V
2100 V

5V
10 mA
30 mA

2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

FE

Ratings

min typ max
VCB=2100V , IE=0 1 µA
VEB=4V, IC=0 1 µA
VCE=5V, IC=500µA1060
VCE=10V , IC=500µA 6 MHz

T

Continued on next page.

11502 TS IM TA-3427 / 12099 HA (KT) / 73094 MT (KOTO) 8-7338

Unit

No.3688-1/3

2SC4710LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=1mA, IB=200µA2V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 1.3 pF

VCE(sat) IC=1mA, IB=200µA5V

(BR)CBOIC
(BR)CEOIC

(BR)EBOIE

=10µA, IE=0 2100 V
=100µA, RBE=∞ 2100 V

=10µA, IC=0 5 V

Ratings

min typ max

Unit

1000

IC -- V

35µA

50µA

800

µA

-­C

600

40µA

45µA

CE

30µA

25µA

20µA

mA

-­C

10

2000µA

8

6

15µA

400

10

µA

Collector Current, I

200

0

0684210

Collector-to-Emitter Voltage, V

h

-- I

100

7
5

3

FE

2

10

7

DC Current Gain, h

5

3
2

573573

0.1 1.0

10

7
5

FE

Ta=

°C

25

°C

--40

2

Collector Current, I

VBE(sat) -- I

120

C

°C

2

C --

C

CE --

mA

5µA

=0

I

B

V

VCE=5V

573

IC / IB=5

ITR07475

10

ITR07477

2

4

Collector Current, I

2

0

0246810

Collector-to-Emitter Voltage, V

5

IC / IB=5

3
2

(sat) -- V

CE

1.0
7
5

3
2

Collector-to-Emitter

Saturation V oltage, V

0.1

12

10

25

73

5

IC -- V

1400µA

1600µA

µA

1800

VCE(sat) -- I

°C

Ta=

120

--40

Collector Current, I

IC -- VBE(ON)

°C

°C

5

1200µA

732

CE

C

C --

1000µA

800µA

600µA

400µA

200µA

100µA

50µA

=0

I

B

V

CE --

mA

ITR07476

7322

5

101.00.1

ITR07478

VCE=5V

3

(sat) -- V

BE

2

1.0
7
5

Base-to-Emitter

Saturation V oltage, V

3
2

57 5723235723

°C

Ta= --40

°C

25

°C

120

Collector Current, I

8

-- mA
C

6

4

Collector Current, I

2

0

0 0.6 0.8 1.00.4

1.00.1

C --

mA

10

ITR07479

0.2 1.41.2

Base-to-Emitter ON Voltage, VBE(on) -- V

°C

Ta=120

°C

°C

25

--40

ITR07480

No.3688-2/3