Sanyo 2SC4705 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Transistor

Low-Frequency General-Purpose Amplifier,

Applications (High h

FE

)

Ordering number:EN3484

2SC4705

4.5

Applications

· Low-frequency general-purpose amplifier, drivers,
muting circuits.

Features

· High DC current gain (hFE=800 to 3200).

· Low collector-to-emitter saturation voltage :
V

· High V

CE(sat)

≤0.5V max.

: V

EBO

EBO

≥15V.

· Small size making it easy to provide high-density,
hybrid ICs.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

B

C

Package Dimensions

unit:mm

2038A

[2SC4705]

1.6

2.5

0.4

2

mm052(draobcimarecnodetnuoM

× )mm8.03.1W

0.5

3

2

1.5

3.0

0.75

1.0

1

4.25max

1.5

0.4

1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)

06V
05V
51V
002Am
003Am
04Am

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

h

V

OBC

V

OBE

V

EF

V

T

V

bo

I,V04=

BC
BE
EC
EC
BC

0=1.0Aµ

E

I,V01=

0=1.0Aµ

C

I,V5=

Am001=

C

I,V01=

Am01=

C

zHM1=f,V01=

Marking :CP

12099HA (KT)/7190MH, TA (KOTO) No.3484–1/3

nimpytxam

00800510023

sgnitaR

052zHM

0.4Fp

tinU

2SC4705

retemaraPlobmySsnoitidnoC

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

I

)tas(EC

C

I

C

)tas(EB

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

I,Am001=

Am2=

B

I,Am001=

Am2=

B

I,Aµ01=

0=06V

E

R,Am1=

=∞ 05V

EB

I,Aµ01=

0=51V

C

sgnitaR

nimpytxam

21.05.0V

58.02.1V

tinU

No.3484–2/3