Sanyo 2SC4705 Specifications

Ordering number:EN3484

NPN Epitaxial Planar Silicon Transistor

2SC4705

Low-Frequency General-Purpose Amplifier,

Applications (High hFE)

Applications

· Low-frequency general-purpose amplifier, drivers,

muting circuits.

Features

· High DC current gain (h =800 to 3200).
		FE
· Low collector-to-emitter saturation voltage :
VCE(sat)≤0.5V max.
· High V : V	EBO	≥15V.
EBO

· Small size making it easy to provide high-density, hybrid ICs.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2038A

[2SC4705]

4.5

	1.6		1.5
		2.5	4.25max
0.4	0.5	1.0
3	2	1	0.4
	1.5
	3.0		1 : Base
	0.75		2 : Collector

3 : Emitter

SANYO : PCP

(Bottom view)

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		60	V
Collector-to-Emitter Voltage	VCEO		50	V
Emitter-to-Base Voltage	VEBO		15	V
Collector Current	IC		200	mA
Collector Current (Pulse)	ICP		300	mA
Base Current	IB		40	mA
Collector Dissipation	PC	Mounted on ceramic board (250mm2× 0.8mm)	1.3	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Collector Cutoff Current	ICBO	VCB=40V, IE=0				0.1	µA
Emitter Cutoff Current	IEBO	VEB=10V, IC=0				0.1	µA
DC Current Gain	hFE	VCE=5V, IC=100mA		800	1500	3200
Gain-Bandwidth Product	fT	VCE=10V, IC=10mA			250		MHz
Output Capacitance	Cob	VCB=10V, f=1MHz			4.0		pF

Marking :CP

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

12099HA (KT)/7190MH, TA (KOTO) No.3484–1/3

2SC4705

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=100mA, IB=2mA			0.12	0.5	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=100mA, IB=2mA			0.85	1.2	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=10µA, IE=0		60			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=1mA, RBE=∞		50			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=10µA, IC=0		15			V

No.3484–2/3