Sanyo 2SC4675 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
20V/8A Switching Applications
Ordering number:EN3708
2SC4675
8.0
Features
· Adoption of MBIT process.
· Low saturation voltage.
· Fast switching speed.
· Large current capacity.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
Package Dimensions
unit:mm
2042B
[2SC4675]
4.0
1.0
1.0
1.6
0.8
0.8
0.75
2.4
OBC
OEC
OBE
Tc=25˚C
1.4
3.0
7.5
1.5
3.0
1.7
4.8
3.3
11.0
15.5
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
03V
02V
5V
8A
21A
5.1A
5.1W
01W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
hEF1VECI,V2=
hEF2VECI,V2=
V
OBC
V
OBE
I,V02=
BC
BE
0=1Aµ
E
I,V4=
0=1Aµ
C
Am005=
C
A6=
C
* : The 2SC4675 is classified by 500mA hFE as follows.
002R001082S041004T002
12099HA (KT)/5201MH, KOTO No.3708–1/4
sgnitaR
nimpytxam
*001*004
07
tinU
2SC4675
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V
T
V
bo
I
)tas(EC
I
)tas(EB
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
gts
f
I,V2=
EC
BC
I,A5=
C
B
I,A5=
C
B
C
R,Am1=
C
E
Am005=
C
zHM1=f,V01=
Am052=
Am052=13.1V
I,Aµ01=
0=03V
E
=∞ 02V
EB
I,Aµ01=
0=5V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
052zHM
06Fp
022004Vm
03sn
052sn
51sn
tinU
No.3708–2/4
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