SANYO 2SC4673 Datasheet
2SC4673
Ordering number : EN3927
UHF Low-Noise Amp, Wide-Band Amp
Applications
NPN Epitaxial Planar Silicon Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) 8-6790 No.3927-1/4
Package Dimensions
unit: mm
2038-PCP
[2SC4673]
E : Emitter
C : Collector
B : Base
SANYO : PCP
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
20 V
Collector-to-Emitter Voltage V
CEO
12 V
Emitter-to-Base Voltage V
EBO
3V
Collector Current I
C
100 mA
Base Current I
B
30 mA
Collector Dissipation P
C
400 mW
Mounted on ceramic board 800 mW
(250mm
2
×0.8mm)
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
Collector Cutoff Current I
CBO
VCB=12V, IE=0 1.0 µA
Emitter Cutoff Current I
EBO
VEB=2V, IC=0 10 µA
DC Current Gain h
FE
VCE=10V, IC=20mA 40* 200*
Gain-Bandwidth Product f
T
VCE=10V, IC=20mA 4.5 GHz
Output Capacitance Cob VCB=10V, f=1MHz 1.1 pF
Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.75 pF
Forward Transfer Gain
S2le
2
VCE=10V, IC=20mA, f=0.9GHz 8.0 dB
Noise Figure NF VCE=10V, IC=5mA, f=0.9GHz 1.5 3.0 dB
* : The 2SC4673 is classified by 20mA hFEas follows :
Making : CD
hFErank : C, D, E
Features
• Low noise figure : NF=1.5dB typ (f=0.9GHz).
• High power gain : S2le2=8.0dB typ (f=0.9GHz).
• High cutoff frequency : fT=4.5GHz typ.
40 C 80 60 D 120 100 E 200
NT Test Circuit
2SC4673
No.3927-2/4
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