Sanyo 2SC4650 Specifications
Ordering number:EN3581
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1787/2SC4650
High-Definition CRT Display
Video Output Applications
Features
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent high
frequency characteristic:
Cre=1.2pF (NPN), 1.7pF (PNP).
· Adoption of FBET processes.
( ) : 2SA1786
CEO
≥200V.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
OBC
OEC
OBE
C
PC
C
V
OBC
V
OBE
V
EF
V
T
V
bo
V
er
I
)tas(EC
C
I
)tas(EB
C
Package Dimensions
unit:mm
2064
[2SA1787/2SC4650]
E : Emitter
C : Collector
B : Base
SANYO : NMP
002)–(V
002)–(V
5)–(V
001)–(Am
002)–(Am
0.1W
˚C
˚C
sgnitaR
nimpytxam
I,V051)–(=
BC
BE
EC
EC
BC
BC
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V01)–(=
C
I,V03)–(=
C
I,Am02)–(=
B
I,Am02)–(=
B
Am01)–(=06023
Am01)–(=051zHM
zHM1=f,V03)–(=
zHM1=f,V03)–(=
Am2)–(=6.0)–(V
Am2)–(=0.1)–(V
)6.2(Fp
7.1Fp
)7.1(Fp
2.1Fp
tinU
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83198HA (KT)/5180TA (KOTO) No.3581–1/5
2SA1787/2SC4650
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
* : The 2SA1787/2SC4650 are classified by 10mA hFE as follows :
021D06002E001023F061
sgnitaR
nimpytxam
I,Aµ01)–(=
0=002)–(V
E
R,Am1)–(=
=∞ 002)–(V
EB
I,Aµ01)–(=
0=5)–(V
C
tinU
No.3581–2/5
Loading...