Sanyo 2SC4646 Specifications
Ordering number:EN3512B
2SA1786 : PNP Epitaxial Planar Silicon Transistor
2SC4646 : NPN Triple Diffused Planar Silicon Transistor
2SA1786/2SC4646
High Voltage Driver Applications
Features
· Large current capacity (IC=2A).
· High breakdown voltage (V
CEO
≥400V).
( ) : 2SA1786
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2064
[2SA1786/2SC4646]
E : Emitter
C : Collector
B : Base
SANYO : NMP
OBC
OEC
OBE
004)–(V
004)–(V
5)–(V
2)–(A
4)–(A
1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
V
OBC
OBE
EF
T
bo
BC
V
BE
V
EC
V
EC
V
BC
I
)tas(EC
C
I
)tas(EB
C
* : The 2SA1786/2SC4646 are classified by 100mA hFE as follows :
08C04021D06002E001
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
I,V003)–(=
0=0.1)–(Aµ
E
I,V4)–(=
0=0.1)–(Aµ
C
I,V01)–(=
C
I,V01)–(=
C
I,Am005)–(=
B
I,Am005)–(=
B
Am001)–(=*04*002
Am001)–(=06)04(zHM
zHM1=f,V03)–(=51)52(Fp
Am05)–(=0.1)–(V
Am05)–(=0.1)–(V
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83198HA (KT)/12894TH AX-8287/4231MH/5180TA (KOTO) X-6912 No.3512–1/5
sgnitaR
tinU
2SA1786/2SC4646
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egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTFFO-nruTt
Switching Time T est Circuit
Unit (resistance : Ω, capacitance : F)
I
OBC)RB(
egatloVnwodkaerBrettimE-ot-rotcelloCV
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
ffo
I,Aµ01)–(=
0=004)–(V
E
R,Am1)–(=
=∞ 004)–(V
EB
I,Aµ01)–(=
0=5)–(V
C
.tiucriCtseTdeificepseeS
.tiucriCtseTdeificepseeS
.tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)21.0(sµ
580.0sµ
)0.3(sµ
0.4sµ
)3.0(sµ
6.0sµ
tinU
No.3512–2/5
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