Sanyo 2SC4637LS Specifications

Ordering number : ENN3706B

2SC4637LS

NPN Triple Diffused Planar Silicon Transistor

2SC4637LS

1800V / 15mA High-Voltage Amplifier,

High-Voltage Switching Applications

Features

•

High breakdown voltage(V

•

Small Cob(typical Cob=1.8pF).

•

Full-isolation package.

•

High reliability(Adoption of HVP process).

min=1800V).

CEO

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Package Dimensions

unit : mm

2079D

[2SC4637LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

2000 V
1800 V

5V
15 mA
50 mA

2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6928

FE

Ratings

min typ max
VCB=1800V , IE=0 1 µA
VEB=4V, IC=0 1 µA
VCE=5V, IC=300µA1060
VCE=10V , IC=300µA 6 MHz

T

Continued on next page.

Unit

No.3706-1/3

2SC4637LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=600µA, IB=120µA2V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 1.8 pF
Thermal Resistance Rthj-c Junction – case 8.3 °C / W

I

-- V

500

14µA

20µA

400

µA

-­C

300

C

18µA
16µA

VCE(sat) IC=600µA, IB=120µA5V

(BR)CBOIC
(BR)CEOIC

(BR)EBOIE

CE

=100µA, IE=0 2000 V
=100µA, RBE=∞ 1800 V

=10µA, IC=0 5 V

10

mA

-­C

900µA
800µA
700µA

8

600µA

6

12µA

10µA

8µA

6µA

200

4

4µA

Collector Current, I

100

0

0246810

100

7
5

Collector-to-Emitter Voltage, V

h

-- I

FE

Ta=120°C

CE --

C

2µA

IB=0

ITR07379

V

VCE=5V

25°C

FE

3

2

10

7

DC Current Gain, h

5

3
2

2

10

-- MHz
T

7

5

--40°C

23 57357

Collector Current, I

fT -- I

23 57 2

1.00.1

C --

mA

C

10

ITR07381

VCE=10V

Collector Current, I

2

0

0246810

Collector-to-Emitter Voltage, V

16

14

12

-- mA

10

C

8

6

4

Collector Current, I

2

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

IC -- VBE(on)

Base-to-Emitter ON Voltage, VBE(on) -- V

5

3
2

-- pF

7
5

Ratings

min typ max

I

-- V

C

CE

1mA

CE --

25°C

--40°C

Ta=120°C

Cob -- V

CB

500µA

400µA

300µA

200µA

100µA

50µA

IB=0

ITR07380

V

ITR07382

f=1MHz

Unit

3

2

Gain-Bandwidth Product, f

1.0
23 57 23 5

23 57

0.1

Collector Current, IC -- mA

1.0

ITR07383

3
2

Output Capacitance, Cob

1.0
7

5

0.1

23 5757

Collector-to-Base Voltage, V

1.0

23 57

10

CB

23 5

-- V

No.3706-2/3

7

ITR07384

100