Sanyo 2SC4636LS Specifications

Ordering number : ENN3705B

2SC4636LS

NPN Triple Diffused Planar Silicon Transistor

2SC4636LS

1800V / 10mA High-Voltage Amplifier,

High-Voltage Switching Applications

Features

•

High breakdown voltage(V

•

Small Cob(typical Cob=1.4pF).

•

Full-isolation package.

•

High reliability(Adoption of HVP process).

min=1800V).

CEO

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Package Dimensions

unit : mm

2079D

[2SC4636LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

2000 V
1800 V

5V
10 mA
30 mA

2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6927

FE

Ratings

min typ max
VCB=1800V , IE=0 1 µA
VEB=4V, IC=0 1 µA
VCE=5V, IC=100µA1060
VCE=10V , IC=100µA 6 MHz

T

Continued on next page.

Unit

No.3705-1/3

2SC4636LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=200µA, IB=40µA2V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 1.4 pF
Thermal Resistance Rthj-c Junction – case 12.5 °C / W

I

-- V

200

C

10µA
9µA

160

µA

-­C

120

80

8µA

VCE(sat) IC=200µA, IB=40µA5V

(BR)CBOIC
(BR)CEOIC

(BR)EBOIE

CE

=10µA, IE=0 2000 V
=100µA, RBE=∞ 1800 V

=10µA, IC=0 5 V

5

mA

-­C

4

3

2

450µA
400µA
350µA

7µA
6µA

5µA

4µA

3µA

2µA

Collector Current, I

40

0

0246810

Collector-to-Emitter Voltage, V

h

-- I

FE

100

FE

7
5

3
2

Ta=120°C

25°C

C

CE --

1µA

IB=0

ITR07369

V

VCE=5V

--40°C

10

7
5

DC Current Gain, h

3
2

Collector Current, I

1

0

0246810

Collector-to-Emitter Voltage, V

12

10

8

-- mA
C

6

4

Collector Current, I

2

IC -- VBE(on)

Ratings

min typ max

I

-- V

C

CE

500µA

CE --

25°C

Ta=120°C

--40°C

300µA

250µA

200µA

150µA

100µA

50µA

20µA

IB=0

ITR07370

V

VCE=5

Unit

1.0

10

-- MHz
T

2

7

5

3

2

23 57357

1.00.1

Collector Current, I

f

-- I

T

23 57 2

mA

C --

C

VCE=10V

Gain-Bandwidth Product, f

1.0
23 57 2

0.1

Collector Current, IC -- mA

23 57

10

ITR07371

1.0

ITR07373

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Base-to-Emitter ON Voltage, VBE(on) -- V

2

10

-- pF

7
5

3

2

1.0

Output Capacitance, Cob

7
5

0.1

23 5757

Collector-to-Base Voltage, V

Cob -- V

1.0

CB

23 57

10

CB

-- V

ITR07372

f=1MHz

23 5

ITR07374

No.3705-2/3

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100