
Ordering number : ENN3704B
2SC4635LS
NPN Triple Diffused Planar Silicon Transistor
2SC4635LS
1500V / 20mA High-Voltage Amplifier,
High-Voltage Switching Applications
Features
•
High breakdown voltage(V
•
Small Cob(typical Cob=1.9pF).
•
Full-isolation package.
•
High reliability(Adoption of HVP process).
min=1500V).
CEO
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Package Dimensions
unit : mm
2079D
[2SC4635LS]
10.0
16.1
3.6
123
2.55
0.9
0.75
1.2
2.55
3.2
3.5
7.2
16.0
14.0
2.4
4.5
2.8
0.6
1.2
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
1500 V
1500 V
5V
20 mA
60 mA
2W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6926
FE
Ratings
min typ max
VCB=1500V , IE=0 1 µA
VEB=4V, IC=0 1 µA
VCE=5V, IC=600µA1060
VCE=10V , IC=600µA 6 MHz
T
Continued on next page.
Unit
No.3704-1/3

2SC4635LS
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5mA, IB=0.3mA 2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 1.9 pF
Thermal Resistance Rthj-c Junction – case 8.3 °C / W
I
-- V
2.0
C
VCE(sat) IC=1.5mA, IB=0.3mA 5 V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CE
=100µA, IE=0 1500 V
=1mA, RBE=∞ 1500 V
=100µA, IC=0 5 V
50
50µA
45µA
mA
-C
1.6
1.2
40µA
35µA
30µA
mA
-C
40
30
25µA
0.8
20µA
20
15µA
Collector Current, I
0.4
10µA
Collector Current, I
10
5µA
0
024 8106
Collector-to-Emitter Voltage, V
h
-- I
100
FE
7
5
Ta=120°C
C
IB=0
CE --
ITR07359
V
VCE=5V
0
024 8610
Collector-to-Emitter Voltage, V
24
20
IC -- VBE(on)
Ratings
min typ max
I
-- V
C
9mA
CE
10mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
IB=0
CE --
V
ITR07360
VCE=5V
Unit
FE
3
2
10
7
DC Current Gain, h
5
3
2
57 2 3 57
0.1 1.0
10
7
5
-- MHz
25°C
--40°C
Collector Current, I
fT -- I
223357
mA
C --
C
10
VCE=10V
T
3
2
1.0
Gain-Bandwidth Product, f
7
5
57 7 723 3552
1.0 100.1
Collector Current, IC -- mA
ITR07361
ITR07363
16
-- mA
C
Ta=120°C
25°C
--40°C
12
8
Collector Current, I
4
0
0 0.2 0.4 0.6 0.8 10 1412
Base-to-Emitter ON Voltage, VBE(on) -- V
-- pF
2
10
7
5
3
2
Cob -- V
CB
Output Capacitance, Cob
1.0
57 723 5
0.1 1.0
Collector-to-Base Voltage, V
723 5
10
CB
f=1MHz
-- V
ITR07362
723 5
100
ITR07364
No.3704-2/3

5
3
2
(sat) -- V
CE
1.0
7
5
3
2
Collector-to-Emitter
Saturation V oltage, V
0.1
100
ICP=60mA
7
5
3
IC=20mA
2
10
-- mA
C
7
5
3
2
1.0
7
5
Collector Current, I
3
°C
Tc=25
2
Single pulse
0.1
Ta=120°C
VCE(sat) -- I
25°C
C
--40°C
5723 35257
Collector Current, I
C --
mA
A S O
≤100µs
200µs
500µs
1ms
10ms
DC operation
723
523557
Collector-to-Emitter Voltage, VCE -- V
1000100
2SC4635LS
IC / IB=5
100.1 1.0
ITR07365
ITR07367
5
3
2
(sat) -- V
VBE(sat) -- I
C
BE
1.0
Ta= --40°C
7
5
25°C
120°C
Base-to-Emitter
Saturation V oltage, V
3
2
2.4
2.0
-- W
C
1.6
723
5723 35257723
Collector Current, I
PC -- Ta
C --
mA
No heat sink
1.2
0.8
Collector Dissipation, P
0.4
0
020 604080 100 120 140 160
Ambient Temperature, Ta -- °C
IC / IB=5
100.1 1.0
ITR07366
ITR07368
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
No.3704-3/3
PS