Sanyo 2SC4635LS Specifications

Ordering number : ENN3704B

2SC4635LS

NPN Triple Diffused Planar Silicon Transistor

2SC4635LS

1500V / 20mA High-Voltage Amplifier,

High-Voltage Switching Applications

Features

•

High breakdown voltage(V

•

Small Cob(typical Cob=1.9pF).

•

Full-isolation package.

•

High reliability(Adoption of HVP process).

min=1500V).

CEO

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Package Dimensions

unit : mm

2079D

[2SC4635LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

1500 V
1500 V

5V
20 mA
60 mA

2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6926

FE

Ratings

min typ max
VCB=1500V , IE=0 1 µA
VEB=4V, IC=0 1 µA
VCE=5V, IC=600µA1060
VCE=10V , IC=600µA 6 MHz

T

Continued on next page.

Unit

No.3704-1/3

2SC4635LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5mA, IB=0.3mA 2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 1.9 pF
Thermal Resistance Rthj-c Junction – case 8.3 °C / W

I

-- V

2.0

C

VCE(sat) IC=1.5mA, IB=0.3mA 5 V

(BR)CBOIC
(BR)CEOIC

(BR)EBOIE

CE

=100µA, IE=0 1500 V
=1mA, RBE=∞ 1500 V

=100µA, IC=0 5 V

50

50µA

45µA

mA

-­C

1.6

1.2

40µA
35µA

30µA

mA

-­C

40

30

25µA

0.8

20µA

20

15µA

Collector Current, I

0.4

10µA

Collector Current, I

10

5µA

0

024 8106

Collector-to-Emitter Voltage, V

h

-- I

100

FE

7
5

Ta=120°C

C

IB=0

CE --

ITR07359

V

VCE=5V

0

024 8610

Collector-to-Emitter Voltage, V

24

20

IC -- VBE(on)

Ratings

min typ max

I

-- V

C

9mA

CE

10mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

IB=0

CE --

V

ITR07360

VCE=5V

Unit

FE

3

2

10

7

DC Current Gain, h

5

3
2

57 2 3 57

0.1 1.0

10

7

5

-- MHz

25°C

--40°C

Collector Current, I

fT -- I

223357

mA

C --

C

10

VCE=10V

T

3

2

1.0

Gain-Bandwidth Product, f

7

5

57 7 723 3552

1.0 100.1

Collector Current, IC -- mA

ITR07361

ITR07363

16

-- mA
C

Ta=120°C

25°C

--40°C

12

8

Collector Current, I

4

0

0 0.2 0.4 0.6 0.8 10 1412

Base-to-Emitter ON Voltage, VBE(on) -- V

-- pF

2

10

7

5

3

2

Cob -- V

CB

Output Capacitance, Cob

1.0
57 723 5

0.1 1.0

Collector-to-Base Voltage, V

723 5

10

CB

f=1MHz

-- V

ITR07362

723 5

100

ITR07364

No.3704-2/3