Sanyo 2SC4633LS Specifications

Ordering number : ENN3702B

2SC4633LS

NPN Triple Diffused Planar Silicon Transistor

2SC4633LS

1200V / 30mA High-Voltage Amplifier,

High-Voltage Switching Applications

Features

•

High breakdown voltage(V

•

Small Cob(typical Cob=2.0pF).

•

Full-isolation package.

•

High reliability(Adoption of HVP process).

min=1200V).

CEO

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Package Dimensions

unit : mm

2079D

[2SC4633LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

1500 V
1200 V

100 mA

5V

30 mA

2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6924

FE

Ratings

min typ max
VCB=1200V , IE=0 1 µA
VEB=4V, IC=0 1 µA
VCE=5V, IC=1.5mA 10 60
VCE=10V , IC=1.5mA 6 MHz

T

Unit

Continued on next page.

No.3702-1/3

2SC4633LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=3mA, IB=0.6mA 2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 2.0 pF
Thermal Resistance Rthj-c Junction – case 8.3 °C / W

I

-- V

C

90µA

mA

-­C

2.0

1.6

1.2

0.8

100µA

70µA

80µA

VCE(sat) IC=3mA, IB=0.6mA 5 V

(BR)CBOIC
(BR)CEOIC

(BR)EBOIE

CE

=100µA, IE=0 1500 V
=1mA, RBE=∞ 1200 V

=100µA, IC=0 5 V

100

60µA
50µA

40µA

30µA

20µA

FE

7
5

3

2

Ta=120°C

25°C

--40°C

DC Current Gain, h

Collector Current, I

0.4

0

024 8106

Collector-to-Emitter Voltage, V

10

7
5

fT -- I

-- MHz
T

3

2

10µA

IB=0

V

CE --

ITR07340

C

VCE=10V
Ta=25°C

10

7
5

5235 223 355

Collector Current, I

2

10

-- pF

7
5

Ratings

min typ max

h

-- I

FE

1.00.1

Cob -- V

C

C --

CB

mA

10

VCE=5V

ITR07341

f=1MHz

Unit

1.0

7
5

Gain-Bandwidth Product, f

3
2

57 2 3 57

0.1 1.0

Collector Current, IC -- mA

5

IC / IB=5

3
2

(sat) -- V

1.0

CE

7
5

3
2

Collector-to-Emitter

Saturation V oltage, V

0.1
7

5

52352 235 35

VCE(sat) -- I

Ta=120°C

--40°C

1.00.1 10

25°C

Collector Current, I

23 57

C

mA

C --

ITR07342

ITR07344

3

2

1.0

Output Capacitance, Cob

7
5

10

52351023 5

0.1 1.0

Collector-to-Base Voltage, V

5

3

2

VBE(sat) -- I

C

CB

23 5

-- V

IC / IB=5

100

ITR07343

(sat) -- V

BE

1.0
7
5

3

2

Base-to-Emitter

Saturation V oltage, V

0.1

52352 235 35

Ta= --40°C

25°C

120°C

1.00.1 10

Collector Current, I

C --

mA

ITR07345

No.3702-2/3