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Ordering number : ENN3702B
2SC4633LS
NPN Triple Diffused Planar Silicon Transistor
2SC4633LS
1200V / 30mA High-Voltage Amplifier,
High-Voltage Switching Applications
Features
•
High breakdown voltage(V
•
Small Cob(typical Cob=2.0pF).
•
Full-isolation package.
•
High reliability(Adoption of HVP process).
min=1200V).
CEO
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Package Dimensions
unit : mm
2079D
[2SC4633LS]
10.0
16.1
3.6
123
2.55
0.9
0.75
1.2
2.55
3.2
3.5
7.2
16.0
14.0
2.4
4.5
2.8
0.6
1.2
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
1500 V
1200 V
100 mA
5V
30 mA
2W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6924
FE
Ratings
min typ max
VCB=1200V , IE=0 1 µA
VEB=4V, IC=0 1 µA
VCE=5V, IC=1.5mA 10 60
VCE=10V , IC=1.5mA 6 MHz
T
Unit
Continued on next page.
No.3702-1/3
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2SC4633LS
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=3mA, IB=0.6mA 2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 2.0 pF
Thermal Resistance Rthj-c Junction – case 8.3 °C / W
I
-- V
C
90µA
mA
-C
2.0
1.6
1.2
0.8
100µA
70µA
80µA
VCE(sat) IC=3mA, IB=0.6mA 5 V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CE
=100µA, IE=0 1500 V
=1mA, RBE=∞ 1200 V
=100µA, IC=0 5 V
100
60µA
50µA
40µA
30µA
20µA
FE
7
5
3
2
Ta=120°C
25°C
--40°C
DC Current Gain, h
Collector Current, I
0.4
0
024 8106
Collector-to-Emitter Voltage, V
10
7
5
fT -- I
-- MHz
T
3
2
10µA
IB=0
V
CE --
ITR07340
C
VCE=10V
Ta=25°C
10
7
5
5235 223 355
Collector Current, I
2
10
-- pF
7
5
Ratings
min typ max
h
-- I
FE
1.00.1
Cob -- V
C
C --
CB
mA
10
VCE=5V
ITR07341
f=1MHz
Unit
1.0
7
5
Gain-Bandwidth Product, f
3
2
57 2 3 57
0.1 1.0
Collector Current, IC -- mA
5
IC / IB=5
3
2
(sat) -- V
1.0
CE
7
5
3
2
Collector-to-Emitter
Saturation V oltage, V
0.1
7
5
52352 235 35
VCE(sat) -- I
Ta=120°C
--40°C
1.00.1 10
25°C
Collector Current, I
23 57
C
mA
C --
ITR07342
ITR07344
3
2
1.0
Output Capacitance, Cob
7
5
10
52351023 5
0.1 1.0
Collector-to-Base Voltage, V
5
3
2
VBE(sat) -- I
C
CB
23 5
-- V
IC / IB=5
100
ITR07343
(sat) -- V
BE
1.0
7
5
3
2
Base-to-Emitter
Saturation V oltage, V
0.1
52352 235 35
Ta= --40°C
25°C
120°C
1.00.1 10
Collector Current, I
C --
mA
ITR07345
No.3702-2/3