Sanyo 2SC4632LS Specifications

Ordering number : ENN3701B

2SC4632LS

NPN Triple Diffused Planar Silicon Transistor

2SC4632LS

1200V / 10mA High-Voltage Amplifier,

High-Voltage Switching Applications

Features

•

High breakdown voltage(V

•

Small Cob(typical Cob=1.6pF).

•

Full-isolation package.

•

High reliability(Adoption of HVP process).

min=1200V).

CEO

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Package Dimensions

unit : mm

2079D

[2SC4632LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

1500 V
1200 V

5V
10 mA
30 mA

2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6923

FE

Ratings

min typ max
VCB=1200V , IE=0 1 µA
VEB=4V, IC=0 1 µA
VCE=5V, IC=0.5mA 10 60
VCE=10V , IC=0.5mA 6 MHz

T

Unit

Continued on next page.

No.3701-1/3

2SC4632LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=1mA, IB=0.2mA 2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 1.6 pF
Thermal Resistance Rthj-c Junction – case 12.5 °C / W

I

-- V

C

mA

-­C

1.0

0.8

0.6

40µA

35µA

45µA

50µA

VCE(sat) IC=1mA, IB=0.2mA 5 V

(BR)CBOIC
(BR)CEOIC

(BR)EBOIE

CE

=100µA, IE=0 1500 V
=1mA, RBE=∞ 1200 V

=100µA, IC=0 5 V

30µA

25µA

100

7
5

Ta=120°C

FE

20µA

3

25°C

Ratings

min typ max

h

-- I

FE

C

Unit

15µA

0.4

10µA

Collector Current, I

0.2

0

024 8106

Collector-to-Emitter Voltage, V

fT -- I

10

7
5

C

IB=0

CE --

-- MHz
T

3

2

1.0

7
5

Gain-Bandwidth Product, f

3
2

57 23 57 23 5

0.1 1.0

Collector Current, IC -- mA

2

1.0

(sat) -- V

7

CE

5

3

2

Collector-to-Emitter

Saturation V oltage, V

0.1
7

52735 2 2735

VCE(sat) -- I

Ta=120°C

1.00.1 10

Collector Current, I

25°C

--40°C

C --

C

mA

5µA

ITR07331

V

VCE=10V
Ta=25°C

ITR07333

I

/ IB=5

C

ITR07335

2

--40°C

DC Current Gain, h

10

7
5

57 2 3 5 272357

Collector Current, I

10

7

5

-- pF

3

2

1.0

Output Capacitance, Cob

7
5

52351023 5

0.1 1.0

Collector-to-Base Voltage, V

5

3

2

1.00.1

C --

Cob -- V

CB

VBE(sat) -- I

CB

C

(sat) -- V

BE

1.0
7
5

3

2

Base-to-Emitter

Saturation V oltage, V

0.1

Ta= --40°C

25°C

120°C

27755

32 2753

Collector Current, I

1.00.1

C --

mA

mA

10

ITR07332

f=1MHz

23 5

-- V

ITR07334

IC / IB=5

10

ITR07336

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