Sanyo 2SC4632LS Specifications

Ordering number : ENN3701B

2SC4632LS

NPN Triple Diffused Planar Silicon Transistor

2SC4632LS

1200V / 10mA High-Voltage Amplifier,

High-Voltage Switching Applications

Features

•

High breakdown voltage(V

•

Small Cob(typical Cob=1.6pF).

•

Full-isolation package.

•

High reliability(Adoption of HVP process).

min=1200V).

CEO

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Package Dimensions

unit : mm

2079D

[2SC4632LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

1500 V
1200 V

5V
10 mA
30 mA

2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6923

FE

Ratings

min typ max
VCB=1200V , IE=0 1 µA
VEB=4V, IC=0 1 µA
VCE=5V, IC=0.5mA 10 60
VCE=10V , IC=0.5mA 6 MHz

T

Unit

Continued on next page.

No.3701-1/3

2SC4632LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=1mA, IB=0.2mA 2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 1.6 pF
Thermal Resistance Rthj-c Junction – case 12.5 °C / W

I

-- V

C

mA

-­C

1.0

0.8

0.6

40µA

35µA

45µA

50µA

VCE(sat) IC=1mA, IB=0.2mA 5 V

(BR)CBOIC
(BR)CEOIC

(BR)EBOIE

CE

=100µA, IE=0 1500 V
=1mA, RBE=∞ 1200 V

=100µA, IC=0 5 V

30µA

25µA

100

7
5

Ta=120°C

FE

20µA

3

25°C

Ratings

min typ max

h

-- I

FE

C

Unit

15µA

0.4

10µA

Collector Current, I

0.2

0

024 8106

Collector-to-Emitter Voltage, V

fT -- I

10

7
5

C

IB=0

CE --

-- MHz
T

3

2

1.0

7
5

Gain-Bandwidth Product, f

3
2

57 23 57 23 5

0.1 1.0

Collector Current, IC -- mA

2

1.0

(sat) -- V

7

CE

5

3

2

Collector-to-Emitter

Saturation V oltage, V

0.1
7

52735 2 2735

VCE(sat) -- I

Ta=120°C

1.00.1 10

Collector Current, I

25°C

--40°C

C --

C

mA

5µA

ITR07331

V

VCE=10V
Ta=25°C

ITR07333

I

/ IB=5

C

ITR07335

2

--40°C

DC Current Gain, h

10

7
5

57 2 3 5 272357

Collector Current, I

10

7

5

-- pF

3

2

1.0

Output Capacitance, Cob

7
5

52351023 5

0.1 1.0

Collector-to-Base Voltage, V

5

3

2

1.00.1

C --

Cob -- V

CB

VBE(sat) -- I

CB

C

(sat) -- V

BE

1.0
7
5

3

2

Base-to-Emitter

Saturation V oltage, V

0.1

Ta= --40°C

25°C

120°C

27755

32 2753

Collector Current, I

1.00.1

C --

mA

mA

10

ITR07332

f=1MHz

23 5

-- V

ITR07334

IC / IB=5

10

ITR07336

No.3701-2/3

100

10

8

-- mA
C

6

4

Collector Current, I

2

0

Base-to-Emitter ON Voltage, VBE(on) -- V

2.4

2.0

-- W
C

1.6

1.2

2SC4632LS

IC -- VBE(on)

VCE=5V

25°C

Ta=120°C

0.40 0.2 1.00.6 0.8 1.2

PC -- Ta

No heat sink

--40°C

ITR07337

5

ICP=30mA

3
2

IC=10mA

10

7

-- mA

5

C

3
2

1.0
7
5

Collector Current, I

3
2

°C

Tc=25
Single pulse

0.1

Collector-to-Emitter Voltage, VCE -- V

A S O

10ms

500µs

1ms

DC operation

723

5257

1000100

≤100µs

ITR07338

0.8

Collector Dissipation, P

0.4

0

020 604080 100 120 140 160

Ambient Temperature, Ta -- °C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

ITR07339

This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.

No.3701-3/3

PS