Sanyo 2SC4631LS Specifications

Ordering number : ENN3700B

2SC4631LS

NPN Triple Diffused Planar Silicon Transistor

2SC4631LS

900V / 300mA High-Voltage Amplifier,

High-Voltage Switching Applications

Features

•

High breakdown voltage(V

•

Small Cob(typical Cob=5.0pF).

•

Full-isolation package.

•

High reliability(Adoption of HVP process).

min=900V).

CEO

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Package Dimensions

unit : mm

2079D

[2SC4631LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

1500 V

900 V

300 mA

5V

1A
2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6922

FE

Ratings

min typ max
VCB=900V, IE=0 10 µA
VEB=4V, IC=0 10 µA
VCE=5V, IC=30mA 30
VCE=10V , IC=30mA 6 MHz

T

Unit

Continued on next page.

No.3700-1/3

2SC4631LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=60mA, IB=12mA 2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 5.0 pF
Thermal Resistance Rthj-c Junction – case 6.25 °C / W

I

-- V

50

40

mA

-­C

30

20

Collector Current, I

10

0

024 810613 795

C

Collector-to-Emitter Voltage, V

I

-- V

320

280

240

mA

-­C

200

160

120

80

Collector Current, I

40

0

0 0.2 0.4 0.6 0.8 1.0 1.2

C

Tc=120°C

Base-to-Emitter V oltage, VBE -- V

fT -- I

10

-- MHz
T

2

7
5

VCE(sat) IC=60mA, IB=12mA 5 V

(BR)CBOIC
(BR)CEOIC

(BR)EBOIE

CE

1.0mA

=1mA, IE=0 1500 V
=1mA, RBE=∞ 900 V

=1mA, IC=0 5 V

400

0.9mA

mA

-­C

350

300

250

200

50mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

150

100

Collector Current, I

50

0

024681013579

Collector-to-Emitter Voltage, V

3
2

100

Tc=120°C

FE

7
5

3
2

DC Current Gain, h

10

7
5

3

25°C

--40°C

23 57 23 5 23 57

1.0 10

Collector Current, I

100

7
5

3

-- pF

2

BE

C

25°C

0.3mA

0.2mA

0.1mA

IB=0

CE --

--40°C

V

ITR07322

VCE=5V

ITR07324

VCE=10V

Ratings

min typ max

I

-- V

C

45mA

CE

40mA

35mA

30mA

25mA

20mA

15mA

10mA

5mA

I

CE --

h

-- I

FE

Cob -- V

C

C --

CB

100

mA

=0

B

V

ITR07323

VCE=5V

ITR07325

f=1MHz

Unit

3

2

1.0

Gain-Bandwidth Product, f

7
5

1.0

27

35 2 735

Collector Current, IC -- mA

10 100

ITR07326

10

7
5

3

Output Capacitance, Cob

2

1.0

0.1 1.0

3227755

Collector-to-Base Voltage, V

3275

10

CB

-- V

3

100

ITR07327

No.3700-2/3