Ordering number : ENN3699B
2SC4630LS
NPN Triple Diffused Planar Silicon Transistor
2SC4630LS
900V / 100mA High-Voltage Amplifier,
High-Voltage Switching Applications
Features
•
High breakdown voltage(V
•
Small Cob(typical Cob=2.8pF).
•
Full isolation package.
•
High reliability(Adoption of HVP process).
min=900V).
CEO
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Package Dimensions
unit : mm
2079D
[2SC4630LS]
10.0
16.1
3.6
123
2.55
0.9
0.75
1.2
2.55
3.2
3.5
7.2
16.0
14.0
2.4
4.5
2.8
0.6
1.2
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
1500 V
900 V
100 mA
300 mA
5V
2W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
FE
Ratings
min typ max
VCB=900V, IE=0 10 µA
VEB=4V, IC=0 10 µA
VCE=5V, IC=10mA 30
VCE=10V , IC=10mA 6 MHz
T
11502 TS IM TA-3427 / 11599 HA (KT) / 91296 YK (KOTO) TA-0465
Unit
Continued on next page.
No.3699-1/3
2SC4630LS
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=4mA 2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 2.8 pF
Thermal Resistance Rthj-c Junction – case 12.5 °C / W
I
-- V
20
18
16
mA
14
-C
12
10
8
6
Collector Current, I
4
2
0
021438710965
C
500µA
450µA
Collector-to-Emitter Voltage, V
I
-- V
C
mA
-C
120
100
80
Tc=120°C
60
40
Collector Current, I
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter V oltage, VBE -- V
f
10
-- MHz
7
5
T
T
3
2
1.0
Gain-Bandwidth Product, f
7
5
1.0
3257 532
Collector Current, IC -- mA
VCE(sat) IC=20mA, IB=4mA 5 V
=1mA, IE=0 1500 V
=1mA, RBE=∞ 900 V
=1mA, IC=0 5 V
100
ITR07313
V
VCE=5V
ITR07315
VCE=10V
ITR07317
90
80
mA
70
-C
60
50
40
30
Collector Current, I
20
10
0
021654387109
3
2
Tc=120°C
100
FE
7
5
3
2
DC Current Gain, h
10
7
5
3
1.0 10
5
3
2
-- pF
10
7
5
3
2
Output Capacitance, Cob
1.0
7
5
23 57
0.1
9mA
Collector-to-Emitter Voltage, V
25°C
--40°C
Collector Current, I
1.0
Collector-to-Base Voltage, V
-- I
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CE
400µA
350µA
300µA
250µA
200µA
150µA
100µA
50µA
IB=0
BE
25°C
C
10
CE --
--40°C
Ratings
min typ max
I
-- V
C
CE
10mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
I
=0
B
CE --
h
-- I
FE
Cob -- V
C
mA
C --
CB
2 3 57 2 3 57
10 100
-- V
CB
V
ITR07314
100
ITR07316
f=1MHz
ITR07318
No.3699-2/3
Unit
2723 5 723 5
100
7
5
3
2
10
(sat) -- V
7
5
CE
3
2
1.0
7
5
3
2
Collector-to-Emitter
Saturation V oltage, V
0.1
7
5
1.0
2.4
2.0
-- W
C
1.6
1.2
V
(sat) -- I
CE
Tc= --40°C
253272537
Collector Current, I
10 100
C --
PC -- Ta
No heat sink
2SC4630LS
C
IC / IB=10
25°C
120°C
mA
ITR07319
5
ICP=300mA
3
2
IC=100mA
100
7
-- mA
5
C
3
2
10
7
5
Collector Current, I
3
2
°C
Tc=25
Single pulse
0.1
5
723572
100
Collector-to-Emitter Voltage, VCE -- V
A S O
1ms
10ms
DC operation
≤50µs
100µs
200µs
500µs
1000
ITR07320
0.8
Collector Dissipation, P
0.4
0
020 604080 100 120 140 160
Ambient Temperature, Ta -- °C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
ITR07321
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
No.3699-3/3
PS
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