Sanyo 2SC4630LS Specifications

Ordering number : ENN3699B

2SC4630LS

NPN Triple Diffused Planar Silicon Transistor

2SC4630LS

900V / 100mA High-Voltage Amplifier,

High-Voltage Switching Applications

Features

•

High breakdown voltage(V

•

Small Cob(typical Cob=2.8pF).

•

Full isolation package.

•

High reliability(Adoption of HVP process).

min=900V).

CEO

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Package Dimensions

unit : mm

2079D

[2SC4630LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

1500 V

900 V

100 mA
300 mA

5V

2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

FE

Ratings

min typ max
VCB=900V, IE=0 10 µA
VEB=4V, IC=0 10 µA
VCE=5V, IC=10mA 30
VCE=10V , IC=10mA 6 MHz

T

11502 TS IM TA-3427 / 11599 HA (KT) / 91296 YK (KOTO) TA-0465

Unit

Continued on next page.

No.3699-1/3

2SC4630LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=4mA 2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Output Capacitance Cob VCB=100V, f=1MHz 2.8 pF
Thermal Resistance Rthj-c Junction – case 12.5 °C / W

I

-- V

20

18

16

mA

14

-­C

12

10

8

6

Collector Current, I

4

2
0

021438710965

C

500µA

450µA

Collector-to-Emitter Voltage, V

I

-- V

C

mA

-­C

120

100

80

Tc=120°C

60

40

Collector Current, I

20

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, VBE -- V

f

10

-- MHz

7

5

T

T

3

2

1.0

Gain-Bandwidth Product, f

7
5

1.0

3257 532

Collector Current, IC -- mA

VCE(sat) IC=20mA, IB=4mA 5 V

=1mA, IE=0 1500 V
=1mA, RBE=∞ 900 V

=1mA, IC=0 5 V

100

ITR07313

V

VCE=5V

ITR07315

VCE=10V

ITR07317

90

80

mA

70

-­C

60

50

40

30

Collector Current, I

20

10

0

021654387109

3
2

Tc=120°C

100

FE

7
5

3
2

DC Current Gain, h

10

7
5

3

1.0 10

5

3
2

-- pF

10

7
5

3
2

Output Capacitance, Cob

1.0
7

5

23 57

0.1

9mA

Collector-to-Emitter Voltage, V

25°C

--40°C

Collector Current, I

1.0

Collector-to-Base Voltage, V

-- I

(BR)CBOIC
(BR)CEOIC

(BR)EBOIE

CE

400µA

350µA

300µA

250µA

200µA

150µA
100µA

50µA

IB=0

BE

25°C

C

10

CE --

--40°C

Ratings

min typ max

I

-- V

C

CE

10mA

8mA

7mA

6mA

5mA
4mA

3mA

2mA

1mA

I

=0

B

CE --

h

-- I

FE

Cob -- V

C

mA

C --

CB

2 3 57 2 3 57

10 100

-- V

CB

V

ITR07314

100

ITR07316

f=1MHz

ITR07318

No.3699-2/3

Unit

2723 5 723 5